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Motherboard Manufacturer:	Intel	Code name:
Model:	DQ965GFE	Revision:

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Found: 64

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Size	Module Manufacturer	CRL	Module Info	CL	Part #	DRAM Manufacturer	DRAM Part #	PCB Part #	Device Config	Test #	Test Date	EOL	Env. Code
512MB	Smart Modular Technologies	9	Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM More Info<<<	6	SG646UDR64861-IB	Qimonda (Infineon)	HYB18T512800BF-25 rev B	240-8-2 na	64M x 8	012217	8/29/2006	Yes 7/21/2009 Replacement	RoHS
			DRAM Manuf: Qimonda (Infineon), Dram Part#: HYB18T512800BF-25 rev B, Device Config: 64M x 8, Bank: 1
512MB	ATP Electronics	9	Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM More Info<<<	5	AJ64K64D8BHE7S	Samsung	K4T51083QC-ZCE7 rev C	SJ240D08K1 na	64M x 8	012227	10/5/2006	Yes 10/2/2007 Replacement	RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE7 rev C, Device Config: 64M x 8, Bank: 1
1GB	ATP Electronics	9	Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM More Info<<<	5	AJ28K64E8BHE7S	Samsung	K4T51083QC-ZCE7 rev C	SJ240E08K1 na	64M x 8	012238	9/21/2006	Yes 10/23/2007 Replacement	RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE7 rev C, Device Config: 64M x 8, Bank: 2
512MB	Smart Modular Technologies	9	Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM More Info<<<	5	SG646UDR264851IB	Qimonda (Infineon)	HYB18T512800BF-25F rev B	PG54G240LUBUB1RD rev A	64M x 8	012255	9/7/2006	Yes 7/21/2009 Replacement	RoHS
			DRAM Manuf: Qimonda (Infineon), Dram Part#: HYB18T512800BF-25F rev B, Device Config: 64M x 8, Bank: 1
1GB	S3+	6	Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM More Info<<<	5	S8001G16KT	S3+	S806408KT-3 rev A	B62URCE 1.00 na	64M x 8	012278	9/19/2006		RoHS
			DRAM Manuf: S3+, Dram Part#: S806408KT-3 rev A, Device Config: 64M x 8, Bank: 2
1GB	Smart Modular Technologies	9	Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM More Info<<<	6	SG1286UDR64861-IB	Qimonda (Infineon)	HYB18T512800BF25 rev B	K0602 (240-9-1)	64M x 8	012352	9/26/2006	Yes 7/21/2009 Replacement	RoHS
			DRAM Manuf: Qimonda (Infineon), Dram Part#: HYB18T512800BF25 rev B, Device Config: 64M x 8, Bank: 2
1GB	Smart Modular Technologies	14	Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM More Info<<<	5	SG1286UDR264851NB	Nanya	NT5TU64M8BE-25C rev B	PG58G240LUBUB1RE rev B	64M x 8	012423	10/4/2006		RoHS
			DRAM Manuf: Nanya, Dram Part#: NT5TU64M8BE-25C rev B, Device Config: 64M x 8, Bank: 2
512MB	Smart Modular Technologies	10	Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM More Info<<<	5	SG646UDR264851NB	Nanya	NT5TU64M8BE-25C rev B	PG54G240LUBUB1RD rev A	64M x 8	012432	10/10/2006	Yes 7/21/2009 Replacement	RoHS
			DRAM Manuf: Nanya, Dram Part#: NT5TU64M8BE-25C rev B, Device Config: 64M x 8, Bank: 1
1GB	Buffalo	5	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2U667C-1GMDJ	Micron	MT47H64M8B6-3 rev D	2DUE28F-AA na	64M x 8	012565	10/20/2006		RoHS
			DRAM Manuf: Micron, Dram Part#: MT47H64M8B6-3 rev D, Device Config: 64M x 8, Bank: 2
512MB	Buffalo	7	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2U667C-S512MDJ	Micron	MT47H64M8B6-3 rev D	2DUD18F-AA na	64M x 8	012566	10/23/2006		RoHS
			DRAM Manuf: Micron, Dram Part#: MT47H64M8B6-3 rev D, Device Config: 64M x 8, Bank: 1
256MB	Buffalo	3	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2U667C-X256MDJ	Micron	MT47H32M16BN-3 rev D	2DUC1GF-AA na	32M x 16	012567	10/24/2006		RoHS
			DRAM Manuf: Micron, Dram Part#: MT47H32M16BN-3 rev D, Device Config: 32M x 16, Bank: 1
512MB	Ventura Technology Group	21	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2-51CD63SV-555	Samsung	K4T51083QC-ZCE6 rev C	D2U72F na	64M x 8	012696	1/3/2007		Lead-Free
			DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE6 rev C, Device Config: 64M x 8, Bank: 1
1GB	Smart Modular Technologies	15	Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM More Info<<<	5	SG1286UDR264851IB	Qimonda (Infineon)	HYB18T512800BF25F rev B	PG58G240LUBUB1RE rev B	64M x 8	012723	11/18/2006	Yes 7/20/2009 Replacement	RoHS
			DRAM Manuf: Qimonda (Infineon), Dram Part#: HYB18T512800BF25F rev B, Device Config: 64M x 8, Bank: 2
1GB	Ventura Technology Group	21	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2-53CD64SV-555	Samsung	K4T51083QC-ZCE6 rev C	D2U72G rev 1.0	64M x 8	012976	5/17/2007		Lead-Free
			DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE6 rev C, Device Config: 64M x 8, Bank: 2
512MB	ATP Electronics	18	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	AJ64K64D8BHE6S	Samsung	K4T51083QE-ZCE6 rev E	D2U64D na	64M x 8	013160	1/29/2007		RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T51083QE-ZCE6 rev E, Device Config: 64M x 8, Bank: 1
1GB	ATP Electronics	18	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	AJ28K64E8BHE6S	Samsung	K4T51083QE-ZCE6 rev E	SJ240E08K1 na	64M x 8	013177	1/31/2007		RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T51083QE-ZCE6 rev E, Device Config: 64M x 8, Bank: 2
1GB	Dataram	3	Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM More Info<<<	5	DTM63351A	Nanya	NT5TU64M8BE-25C rev B	40075A rev A	64M x 8	013293	2/28/2007		RoHS
			DRAM Manuf: Nanya, Dram Part#: NT5TU64M8BE-25C rev B, Device Config: 64M x 8, Bank: 2
512MB	Dataram	3	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	DTM63322B	Hynix	HY5PS12821CFP-Y5 rev C	40038A rev A	64M x 8	013333	2/27/2007		RoHS
			DRAM Manuf: Hynix, Dram Part#: HY5PS12821CFP-Y5 rev C, Device Config: 64M x 8, Bank: 1
1GB	Dataram	4	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	DTM63323B	Hynix	HY5PS12821CFP-Y5 rev C	40031A rev A	64M x 8	013334	2/26/2007		RoHS
			DRAM Manuf: Hynix, Dram Part#: HY5PS12821CFP-Y5 rev C, Device Config: 64M x 8, Bank: 2
2GB	ATP Electronics	9	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	AJ56K64E8BJE6S	Samsung	K4T1G084QA-ZCE6 rev A	SJ240E08K1 na	128M x 8	013399	3/9/2007	Yes 10/30/2007 Replacement	RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T1G084QA-ZCE6 rev A, Device Config: 128M x 8, Bank: 2

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