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Motherboard Manufacturer:	Intel	Code name:
Model:	D975XBX2/S975XBX2	Revision:	400

Motherboard Alerts:

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Found: 51

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Size	Module Manufacturer	CRL	Module Info	CL	Part #	DRAM Manufacturer	DRAM Part #	PCB Part #	Device Config	Test #	Test Date	EOL	Env. Code
1GB	Smart Modular Technologies	14	Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM More Info<<<	5	SG1286UDR264851NB	Nanya	NT5TU64M8BE-25C rev B	PG58G240LUBUB1RE rev B	64M x 8	012887	12/6/2006		RoHS
			DRAM Manuf: Nanya, Dram Part#: NT5TU64M8BE-25C rev B, Device Config: 64M x 8, Bank: 2
1GB	Smart Modular Technologies	15	Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM More Info<<<	5	SG1286UDR264851IB	Qimonda (Infineon)	HYB18T512800BF25F rev B	PG58G240LUBUB1RE rev B	64M x 8	012888	12/7/2006	Yes 7/20/2009 Replacement	RoHS
			DRAM Manuf: Qimonda (Infineon), Dram Part#: HYB18T512800BF25F rev B, Device Config: 64M x 8, Bank: 2
512MB	Smart Modular Technologies	10	Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM More Info<<<	5	SG646UDR264851NB	Nanya	NT5TU64M8BE-25C rev B	PG54G240LUBUB1RD rev A	64M x 8	012889	12/12/2006	Yes 7/21/2009 Replacement	RoHS
			DRAM Manuf: Nanya, Dram Part#: NT5TU64M8BE-25C rev B, Device Config: 64M x 8, Bank: 1
512MB	Ventura Technology Group	5	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2-51CD63LV-555	Elpida	EDE5108AGBG-6E-E rev G	D2U72F na	64M x 8	012902	12/11/2006		RoHS
			DRAM Manuf: Elpida, Dram Part#: EDE5108AGBG-6E-E rev G, Device Config: 64M x 8, Bank: 1
1GB	Ventura Technology Group	6	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2-53CD64LV-555	Elpida	EDE5108AGBG-6E-E rev G	D2U72G na	64M x 8	012907	12/13/2006		RoHS
			DRAM Manuf: Elpida, Dram Part#: EDE5108AGBG-6E-E rev G, Device Config: 64M x 8, Bank: 2
1GB	Ventura Technology Group	6	ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2-54CD64SV-555	Samsung	K4T51083QC-ZCE6 rev C	D2U72G rev 1.0	64M x 8	012974	12/22/2006		Lead-Free
			DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE6 rev C, Device Config: 64M x 8, Bank: 2
1GB	Ventura Technology Group	21	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2-53CD64SV-555	Samsung	K4T51083QC-ZCE6 rev C	D2U72G rev 1.0	64M x 8	012975	1/5/2007		Lead-Free
			DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE6 rev C, Device Config: 64M x 8, Bank: 2
512MB	Ventura Technology Group	21	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2-51CD63SV-555	Samsung	K4T51083QC-ZCE6 rev C	D2U72F na	64M x 8	013108	1/16/2007		Lead-Free
			DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE6 rev C, Device Config: 64M x 8, Bank: 1
1GB	ATP Electronics	6	ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	AJ28K72G8BHE6S	Samsung	K4T51083QE-ZCE6 rev E	D2U72G V1.0	64M x 8	013146	2/5/2007		RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T51083QE-ZCE6 rev E, Device Config: 64M x 8, Bank: 2
512MB	ATP Electronics	18	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	AJ64K64D8BHE6S	Samsung	K4T51083QE-ZCE6 rev E	D2U64D na	64M x 8	013151	2/6/2007		RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T51083QE-ZCE6 rev E, Device Config: 64M x 8, Bank: 1
512MB	ATP Electronics	6	ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	AJ64K72F8BHE6S	Samsung	K4T51083QE-ZCE6 rev E	D2U72F na	64M x 8	013170	1/31/2007		RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T51083QE-ZCE6 rev E, Device Config: 64M x 8, Bank: 1
1GB	ATP Electronics	18	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	AJ28K64E8BHE6S	Samsung	K4T51083QE-ZCE6 rev E	SJ240E08K1 na	64M x 8	013175	1/25/2007		RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T51083QE-ZCE6 rev E, Device Config: 64M x 8, Bank: 2
2GB	ATP Electronics	9	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	AJ56K64E8BJE6S	Samsung	K4T1G084QA-ZCE6 rev A	SJ240E08K1 na	128M x 8	013379	2/28/2007	Yes 10/30/2007 Replacement	RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T1G084QA-ZCE6 rev A, Device Config: 128M x 8, Bank: 2
2GB	ATP Electronics	5	ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	AJ56K72G8BJE6S	Samsung	K4T1G084QA-ZCE6 rev A	SJ240G08K1 na	128M x 8	013394	3/6/2007	Yes 10/31/2007 Replacement	RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T1G084QA-ZCE6 rev A, Device Config: 128M x 8, Bank: 2
2GB	Ventura Technology Group	23	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2-55CG64EV-555	Qimonda	HYB18T1G800BF-3S rev B	D2U72G na	128M x 8	013432	6/29/2007		RoHS
			DRAM Manuf: Qimonda, Dram Part#: HYB18T1G800BF-3S rev B, Device Config: 128M x 8, Bank: 2
2GB	Ventura Technology Group	3	ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2-56CG64EV-555	Qimonda	HYB18T1G800AF-3S rev A	D2U72G na	128M x 8	013438	4/26/2007		RoHS
			DRAM Manuf: Qimonda, Dram Part#: HYB18T1G800AF-3S rev A, Device Config: 128M x 8, Bank: 2
2GB	Smart Modular Technologies	4	ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	SG2567UDR212852IA	Qimonda	HYB18T1G800AF-3S rev A	PG58G240NUBUB1RG rev A	128M x 8	013664	4/19/2007	Yes 7/21/2009 Replacement	RoHS
			DRAM Manuf: Qimonda, Dram Part#: HYB18T1G800AF-3S rev A, Device Config: 128M x 8, Bank: 2
512MB	Legacy Electronics Inc.	3	ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	B557K4C20FC-30R	Samsung	K4T51083QC-ZCE6 rev C	D2U72F rev C	64M x 8	013801	5/8/2007		RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE6 rev C, Device Config: 64M x 8, Bank: 1
2GB	Smart Modular Technologies	14	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	SG2566UDR212852IB	Qimonda	HYB18T1G800BF-3S rev B	PG58G240LUBUB1RE rev B	128M x 8	013906	5/17/2007	Yes 7/21/2009 Replacement	RoHS
			DRAM Manuf: Qimonda, Dram Part#: HYB18T1G800BF-3S rev B, Device Config: 128M x 8, Bank: 2
2GB	Buffalo	9	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2U667C-2GMEJ	Micron	MT47H128M8HQ-3 rev E	2DUE28F-AA na	128M x 8	013926	6/5/2007		RoHS
			DRAM Manuf: Micron, Dram Part#: MT47H128M8HQ-3 rev E, Device Config: 128M x 8, Bank: 2

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