Search > Tested Motherboard > Results >>

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| Motherboard Manufacturer: |
Intel |
Code name: |
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| Model: |
D945GCZ/D945PAW |
Revision: |
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Motherboard Alerts: |
1. These DIMMs have passed compatibility testing on Intel Desktop D945GCZ. Intel has approved the use of these test results to also certify compatibility for the following Intel Desktop Boards: D945PAW "Atwood".
2. Double-sided DIMMs with x16 organization are not supported.
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Size
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Module Manufacturer
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Certified
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CRL
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Module Info
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CL
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Low Profile
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Part #
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DRAM Manufacturer
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DRAM Part #
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PCB Part #
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Device Config
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Test #
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Test Date
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Report
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EOL
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Env. Code
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| 1GB |
S3+
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4
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Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM
More Info<<<
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5 |
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S6671G16KT |
S3+ |
S666408KT-3 rev A |
B62URCE 1.00 na |
64M x 8 |
012268 |
10/18/2006 |
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RoHS
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DRAM Manuf: S3+, Dram Part#: S666408KT-3 rev A, Device Config: 64M x 8, Bank: 2 |
| 1GB |
Centon Electronics
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2
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Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM
More Info<<<
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5 |
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LTOP-018 |
Nanya |
NT5TU64M8AE-3C rev A |
B62URCE 1.00 |
64M x 8 |
011832 |
7/25/2006 |
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Lead-Free
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DRAM Manuf: Nanya, Dram Part#: NT5TU64M8AE-3C rev A, Device Config: 64M x 8, Bank: 2 |
| 512MB |
Centon Electronics
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2
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Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM
More Info<<<
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5 |
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LTOP-017 |
Nanya |
NT5TU64M8AE-3C rev A |
D2U64D |
64M x 8 |
011839 |
7/31/2006 |
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Lead-Free
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DRAM Manuf: Nanya, Dram Part#: NT5TU64M8AE-3C rev A, Device Config: 64M x 8, Bank: 1 |
| 1GB |
Buffalo
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3
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Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM
More Info<<<
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5 |
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D2U667C-1GNAJ |
Nanya |
NT5TU64M8AE-3C rev A |
2DUE28F-AA na |
64M x 8 |
011073 |
4/14/2006 |
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Lead-Free
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DRAM Manuf: Nanya, Dram Part#: NT5TU64M8AE-3C rev A, Device Config: 64M x 8, Bank: 2 |
| 512MB |
Buffalo
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4
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Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM
More Info<<<
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5 |
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D2U667C-S512NAJ |
Nanya |
NT5TU64M8AE-3C rev A |
2DUD18F-AA na |
64M x 8 |
011085 |
4/17/2006 |
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Lead-Free
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DRAM Manuf: Nanya, Dram Part#: NT5TU64M8AE-3C rev A, Device Config: 64M x 8, Bank: 1 |
| 1GB |
Avant Technology
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5
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Non-ECC, Unbuffered, 533Mhz, Synch 3.75ns, DDR2 DIMM
More Info<<<
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4 |
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AVF6428U52E4533F4-MTBP |
Micron |
MT47H64M8CB-37E rev B |
B62URCE 1.00 rev 1 |
64M x 8 |
011047 |
4/7/2006 |
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Lead-Free
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DRAM Manuf: Micron, Dram Part#: MT47H64M8CB-37E rev B, Device Config: 64M x 8, Bank: 2 |
| 512MB |
Buffalo
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7
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Non-ECC, Unbuffered, 533Mhz, Synch 3.75ns, DDR2 DIMM
More Info<<<
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4 |
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D2U533B-S512MBJ |
Micron |
MT47H64M8CB-37E rev B |
2DUA18F-BA rev B |
64M x 8 |
009644 |
7/12/2005 |
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Lead-Free
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DRAM Manuf: Micron, Dram Part#: MT47H64M8CB-37E rev B, Device Config: 64M x 8, Bank: 1 |
| 512MB |
Smart Modular Technologies
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3
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Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM
More Info<<<
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5 |
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SB646UDR26485-2-MB |
Micron |
MT47H64M8CB-3 rev B |
0442 rev B |
64M x 8 |
010241 |
10/21/2005 |
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Yes
7/20/2009
Replacement
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RoHS
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DRAM Manuf: Micron, Dram Part#: MT47H64M8CB-3 rev B, Device Config: 64M x 8, Bank: 1 |
| 512MB |
Buffalo
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5
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Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM
More Info<<<
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5 |
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D2U667C-S512MBJ |
Micron |
MT47H64M8CB-3 rev B |
2DUD18F-AA na |
64M x 8 |
010303 |
11/15/2005 |
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Lead-Free
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DRAM Manuf: Micron, Dram Part#: MT47H64M8CB-3 rev B, Device Config: 64M x 8, Bank: 1 |
| 1GB |
Smart Modular Technologies
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4
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Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM
More Info<<<
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5 |
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SG1286UDR264852MB |
Micron |
MT47H64M8CB-3 rev B |
PG58G240LUBUB1RE rev A |
64M x 8 |
010338 |
11/14/2005 |
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Yes
1/27/2006
Replacement
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RoHS
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DRAM Manuf: Micron, Dram Part#: MT47H64M8CB-3 rev B, Device Config: 64M x 8, Bank: 2 |
| 1GB |
Buffalo
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5
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Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM
More Info<<<
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5 |
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D2U667C-1GMBJ |
Micron |
MT47H64M8CB-3 rev B |
2DUE28F-AA na |
64M x 8 |
010797 |
1/12/2006 |
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Lead-Free
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DRAM Manuf: Micron, Dram Part#: MT47H64M8CB-3 rev B, Device Config: 64M x 8, Bank: 2 |
| 512MB |
Swissbit
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3
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Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM
More Info<<<
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5 |
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SEU06464D3B21MT-30 |
Micron |
MT47H64M8CB-3 rev B |
8132c rev C |
64M x 8 |
010561 |
12/14/2005 |
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RoHS
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DRAM Manuf: Micron, Dram Part#: MT47H64M8CB-3 rev B, Device Config: 64M x 8, Bank: 1 |
| 512MB |
Smart Modular Technologies
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3
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Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM
More Info<<<
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5 |
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SM646UDR26485-2-M |
Micron |
MT47H64M8BT-3 rev A |
0442 rev B |
64M x 8 |
009998 |
8/18/2005 |
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Yes
7/21/2009
Replacement
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N/A
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DRAM Manuf: Micron, Dram Part#: MT47H64M8BT-3 rev A, Device Config: 64M x 8, Bank: N/A |
| 256MB |
Buffalo
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5
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Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM
More Info<<<
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5 |
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D2U667C-S256MBJ |
Micron |
MT47H32M8BP-3 rev B |
2DUD18F-AA |
32M x 8 |
009791 |
7/26/2005 |
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Lead-Free
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DRAM Manuf: Micron, Dram Part#: MT47H32M8BP-3 rev B, Device Config: 32M x 8, Bank: 1 |
| 512MB |
Buffalo
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3
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Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM
More Info<<<
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5 |
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D2U667C-512MBJ |
Micron |
MT47H32M8BP-3 rev B |
2DUE28F-AA |
32M x 8 |
009793 |
9/6/2005 |
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N/A
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DRAM Manuf: Micron, Dram Part#: MT47H32M8BP-3 rev B, Device Config: 32M x 8, Bank: N/A |
| 256MB |
Buffalo
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4
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Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM
More Info<<<
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5 |
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D2U667C-X256MBJ |
Micron |
MT47H32M16CC-3 rev B |
2DUC1GF-AA na |
32M x 16 |
010666 |
12/20/2005 |
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RoHS
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DRAM Manuf: Micron, Dram Part#: MT47H32M16CC-3 rev B, Device Config: 32M x 16, Bank: 1 |
| 2GB |
Legacy Electronics Inc.
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12
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Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM
More Info<<<
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5 |
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M526NAE20EC-30R |
Micron |
MT47H128M8HQ-3 rev E |
D2U64E rev E |
128M x 8 |
014241 |
8/14/2007 |
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RoHS
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DRAM Manuf: Micron, Dram Part#: MT47H128M8HQ-3 rev E, Device Config: 128M x 8, Bank: 2 |
| 2GB |
Buffalo
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9
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Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM
More Info<<<
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5 |
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D2U667C-2GMEJ |
Micron |
MT47H128M8HQ-3 rev E |
2DUE28F-AA na |
128M x 8 |
014589 |
11/12/2007 |
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RoHS
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DRAM Manuf: Micron, Dram Part#: MT47H128M8HQ-3 rev E, Device Config: 128M x 8, Bank: 2 |
| 512MB |
ATP Electronics
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18
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Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM
More Info<<<
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5 |
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AJ64K64D8BHE6S |
Samsung |
K4T51083QE-ZCE6 rev E |
D2U64D na |
64M x 8 |
013149 |
1/31/2007 |
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RoHS
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DRAM Manuf: Samsung, Dram Part#: K4T51083QE-ZCE6 rev E, Device Config: 64M x 8, Bank: 1 |
| 1GB |
ATP Electronics
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18
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Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM
More Info<<<
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5 |
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AJ28K64E8BHE6S |
Samsung |
K4T51083QE-ZCE6 rev E |
SJ240E08K1 na |
64M x 8 |
013167 |
2/7/2007 |
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RoHS
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DRAM Manuf: Samsung, Dram Part#: K4T51083QE-ZCE6 rev E, Device Config: 64M x 8, Bank: 2 |
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