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Motherboard Manufacturer:	Intel	Code name:
Model:	D5400XS	Revision:	400

Motherboard Alerts:	This board does not have a serial port.

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Found: 40

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Size	Module Manufacturer	CRL	Module Info	CL	Part #	DRAM Manufacturer	DRAM Part #	PCB Part #	Device Config	Test #	Test Date	EOL	Env. Code
4GB	Legacy Electronics Inc.	21	ECC, Buffered, 667Mhz, Synch 3ns, FB-DIMM More Info<<<	5	B547RYC9BEP-30R	Samsung	K4T1G044QQ-HCE6 rev Q	LE36D2FG34FRE rev B (5107 Raw Card E)	256M x 4	016246	1/12/2009		RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T1G044QQ-HCE6 rev Q, Device Config: 256M x 4, Bank: 2
1GB	Avant Technology	19	ECC, Buffered, 667Mhz, Synch 3ns, FB-DIMM More Info<<<	5	AVF7228B52E5667F1NYBP-IS	Nanya	NT5TU64M8BE-25C rev B	D2F28B rev B	64M x 8	015280	5/28/2008		RoHS
			DRAM Manuf: Nanya, Dram Part#: NT5TU64M8BE-25C rev B, Device Config: 64M x 8, Bank: 2
2GB	Avant Technology	17	ECC, Buffered, 667Mhz, Synch 3ns, FB-DIMM More Info<<<	5	AVF7256B61E5667F1ELCP-IS	Elpida	EDE1108ACBG-8E-E rev C	D2F28B rev B	128M x 8	015334	6/2/2008		RoHS
			DRAM Manuf: Elpida, Dram Part#: EDE1108ACBG-8E-E rev C, Device Config: 128M x 8, Bank: 2
1GB	Avant Technology	12	ECC, Buffered, 667Mhz, Synch 3ns, FB-DIMM More Info<<<	5	AVF7228B52E5667F1ELJP-IS	Elpida	EDE5108AJBG-8E-E rev J	D2F28B rev B	64M x 8	015302	5/29/2008		RoHS
			DRAM Manuf: Elpida, Dram Part#: EDE5108AJBG-8E-E rev J, Device Config: 64M x 8, Bank: 2
1GB	Kingston	11	ECC, Buffered, 667Mhz, Synch 3.0ns, FB-DIMM More Info<<<	5	KVR667D2S8F5/1GI	Hynix	H5PS1G83EFR-S6C rev E	2025285-002.A00 rev A	128M x 8	017048	8/13/2009		RoHS
			DRAM Manuf: Hynix, Dram Part#: H5PS1G83EFR-S6C rev E, Device Config: 128M x 8, Bank: 1
4GB	Kingston	10	ECC, Buffered, 667Mhz, Synch 3ns, FB-DIMM More Info<<<	5	KVR667D2D4F5/4GI	Elpida	EDE1104AFSE-8E-F rev F	2025378-001.A00 rev A	256M x 4	017437	3/2/2010		RoHS
			DRAM Manuf: Elpida, Dram Part#: EDE1104AFSE-8E-F rev F, Device Config: 256M x 4, Bank: 2
4GB	Kingston	10	ECC, Buffered, 667Mhz, Synch 3ns, FB-DIMM More Info<<<	5	KVR667D2D4F5/4GI	Elpida	EDE1104AFSE-8E-F rev F	2025378-001.A00 rev A	256M x 4	017446	3/3/2010		RoHS
			DRAM Manuf: Elpida, Dram Part#: EDE1104AFSE-8E-F rev F, Device Config: 256M x 4, Bank: 2
4GB	Avant Technology	9	ECC, Buffered, 667Mhz, Synch 3ns, FB-DIMM More Info<<<	5	AVF7251B62E5667F4ELCP-IS	Elpida	EDE1104ACSE-8E-E rev C	BA2FRCU 3.10 rev 3.10	256M x 4	015386	6/4/2008		RoHS
			DRAM Manuf: Elpida, Dram Part#: EDE1104ACSE-8E-E rev C, Device Config: 256M x 4, Bank: 2
2GB	Avant Technology	9	ECC, Buffered, 667Mhz, Synch 3ns, FB-DIMM More Info<<<	5	AVF7256B61E5667F0ELCP-IS	Elpida	EDE1108ACBG-8E-E rev C	50-1451-01A rev A	128M x 8	015357	5/30/2008		RoHS
			DRAM Manuf: Elpida, Dram Part#: EDE1108ACBG-8E-E rev C, Device Config: 128M x 8, Bank: 2
2GB	Buffalo	9	ECC, Buffered, 667Mhz, Synch 3ns, FB-DIMM More Info<<<	5	D2F667CW-2GMEJ	Micron	MT47H128M8HQ-3 rev E	2DFB28F-AC	128M x 8	015075	3/17/2008		RoHS
			DRAM Manuf: Micron, Dram Part#: MT47H128M8HQ-3 rev E, Device Config: 128M x 8, Bank: 2
4GB	Kingston	8	ECC, Buffered, 667Mhz, Synch 3.0ns, FB-DIMM More Info<<<	5	KVR667D2D4F5/4GI	Elpida	EDE1104AESE-8E-F rev E	2025378-001.A00 rev A	256M x 4	016990	7/29/2009	Yes 2/22/2010 Replacement	RoHS
			DRAM Manuf: Elpida, Dram Part#: EDE1104AESE-8E-F rev E, Device Config: 256M x 4, Bank: 2
8GB	Smart Modular Technologies	7	ECC, Buffered, 667Mhz, Synch 3ns, FB-DIMM More Info<<<	5	SG1027FB251252-SA	Samsung	K4T4G264QA-HCE6 rev A	M395T5166AZ0 rev 4	512M x 4	015952	11/14/2008		RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T4G264QA-HCE6 rev A, Device Config: 512M x 4, Bank: 2
2GB	ATP Electronics	7	ECC, Buffered, 667Mhz, Synch 3ns, FB-DIMM More Info<<<	5	AP56K72S8BJE6S	Samsung	K4T1G084QE-HCE6 rev E	SP240S08K1	128M x 8	016349	1/30/2009		RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T1G084QE-HCE6 rev E, Device Config: 128M x 8, Bank: 2
2GB	ATP Electronics	7	ECC, Buffered, 667Mhz, Synch 3ns, FB-DIMM More Info<<<	5	AP56K72S8BJE6S7	Samsung	K4T1G084QQ-HCE6 rev Q	SP240S08K1	128M x 8	016322	1/22/2009		RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T1G084QQ-HCE6 rev Q, Device Config: 128M x 8, Bank: 2
2GB	Avant Technology	6	ECC, Buffered, 800Mhz, Synch 2.5ns, FB-DIMM More Info<<<	5	AVF7256B61E5800F0ELCP-IS	Elpida	EDE1108ACBG-8E-E rev C	50-1451-01A rev A	128M x 8	015238	5/12/2008		RoHS
			DRAM Manuf: Elpida, Dram Part#: EDE1108ACBG-8E-E rev C, Device Config: 128M x 8, Bank: 2
2GB	Kingston	6	ECC, Buffered, 667Mhz, Synch 3.0ns, FB-DIMM More Info<<<	5	KVR667D2S4F5/2GI	Elpida	EDE1104AESE-8E-F rev E	2025310-001.C00 rev C	256M x 4	016817	6/4/2009		RoHS
			DRAM Manuf: Elpida, Dram Part#: EDE1104AESE-8E-F rev E, Device Config: 256M x 4, Bank: 1
2GB	Wintec Industries	6	ECC, Buffered, 667Mhz, Synch 3ns, FB-DIMM More Info<<<	5	39C945384Q	Samsung	K4T1G084QQ-HCE6 rev Q	D2F28B rev B	128M x 8	015214	5/6/2008		RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T1G084QQ-HCE6 rev Q, Device Config: 128M x 8, Bank: 2
8GB	Kingston	5	ECC, Buffered, 667Mhz, Synch 3ns, FB-DIMM More Info<<<	5	KVR667D2D4F5/8GI	Hynix	H5PS2G43AFR-S6C rev A	2025468-001.A00 rev A	512M x 4	017522	5/3/2010		RoHS
			DRAM Manuf: Hynix, Dram Part#: H5PS2G43AFR-S6C rev A, Device Config: 512M x 4, Bank: 2
4GB	ATP Electronics	5	ECC, Buffered, 667Mhz, Synch 3ns, FB-DIMM More Info<<<	5	AP12K72G4BJE6S7	Samsung	K4T1G044QQ-HCE6 rev Q	D2F24E	256M x 4	016335	1/27/2009		RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T1G044QQ-HCE6 rev Q, Device Config: 256M x 4, Bank: 2
4GB	Wintec Industries	4	ECC, Buffered, 667Mhz, Synch 3ns, FB-DIMM More Info<<<	5	39955444Q	Samsung	K4T1G044QQ-HCE6 rev Q	D2F24E rev E	256M x 4	015134	4/18/2008		RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T1G044QQ-HCE6 rev Q, Device Config: 256M x 4, Bank: 2

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