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Motherboard Manufacturer:	Intel	Code name:
Model:	D946GZTS	Revision:

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Found: 9

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Size	Module Manufacturer	Certified	CRL	Module Info	CL	Low Profile	Part #	DRAM Manufacturer	DRAM Part #	PCB Part #	Device Config	Test #	Test Date	Report	EOL	Env. Code
1GB	Ventura Technology Group		21	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5		D2-53CD64SV-555	Samsung	K4T51083QC-ZCE6 rev C	D2U72G rev 1.0	64M x 8	012979	1/11/2007			Lead-Free
				DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE6 rev C, Device Config: 64M x 8, Bank: 2
512MB	Ventura Technology Group		21	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5		D2-51CD63SV-555	Samsung	K4T51083QC-ZCE6 rev C	D2U72F na	64M x 8	013107	1/22/2007			Lead-Free
				DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE6 rev C, Device Config: 64M x 8, Bank: 1
1GB	ATP Electronics		18	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5		AJ28K64E8BHE6S	Samsung	K4T51083QE-ZCE6 rev E	SJ240E08K1 na	64M x 8	013176	2/15/2007			RoHS
				DRAM Manuf: Samsung, Dram Part#: K4T51083QE-ZCE6 rev E, Device Config: 64M x 8, Bank: 2
512MB	ATP Electronics		18	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5		AJ64K64D8BHE6S	Samsung	K4T51083QE-ZCE6 rev E	D2U64D na	64M x 8	013152	2/14/2007			RoHS
				DRAM Manuf: Samsung, Dram Part#: K4T51083QE-ZCE6 rev E, Device Config: 64M x 8, Bank: 1
1GB	ATP Electronics		8	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5		AJ28K64E8BHE6S	Samsung	K4T51083QC-ZCE6 rev C	SJ240E08K1	64M x 8	012240	8/31/2006		Yes 1/19/2007 Replacement	RoHS
				DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE6 rev C, Device Config: 64M x 8, Bank: 2
512MB	ATP Electronics		7	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5		AJ64K64D8BHE6S	Samsung	K4T51083QC-ZCE6 rev C	SJ240D08K1	64M x 8	012242	9/1/2006		Yes 1/19/2007 Replacement	RoHS
				DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE6 rev C, Device Config: 64M x 8, Bank: 1
512MB	Avant Technology		6	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5		AVF6464U52E5667F3-ELG	Elpida	EDE5108AGBG-6E-E rev G	B62URCD 1.00 rev 1	64M x 8	012067	8/23/2006			RoHS
				DRAM Manuf: Elpida, Dram Part#: EDE5108AGBG-6E-E rev G, Device Config: 64M x 8, Bank: 1
512MB	All Components		5	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5		AVF6464U52E5667F3-ELG	Elpida	EDE5108AGBG-6E-E rev G	B62URCD 1.00 rev 1	64M x 8	013350	2/22/2007			Lead-Free
				DRAM Manuf: Elpida, Dram Part#: EDE5108AGBG-6E-E rev G, Device Config: 64M x 8, Bank: 1
512MB	US Technology		5	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5		AVF6464U52E5667F3-ELG	Elpida	EDE5108AGBG-6E-E rev G	B62URCD 1.00 rev 1	64M x 8	013496	3/22/2007			RoHS
				DRAM Manuf: Elpida, Dram Part#: EDE5108AGBG-6E-E rev G, Device Config: 64M x 8, Bank: 1

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