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Motherboard Manufacturer:	Intel	Code name:
Model:	D945GCLF	Revision:	300

Motherboard Alerts:	DDR 667 & 800 MHz validated to run at 533 MHz only

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Found: 8

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Size	Module Manufacturer	Certified	CRL	Module Info	CL	Low Profile	Part #	DRAM Manufacturer	DRAM Part #	PCB Part #	Device Config	Test #	Test Date	Report	EOL	Env. Code
2GB	Buffalo		14	Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM More Info<<<	5		D2U800C-2GECJ	Elpida	E1108ACBG-8E-E rev C	2DUE28F-AA na	128M x 8	016213	1/8/2009			RoHS
				DRAM Manuf: Elpida, Dram Part#: E1108ACBG-8E-E rev C, Device Config: 128M x 8, Bank: 2
1GB	Avant Technology		8	Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM More Info<<<	5		AVF6428U61E5800F6-MTEP	Micron	MT47H128M8HQ-25E E (D9HNQ) rev E	B62U838 1.0 rev 1	128M x 8	015199	4/30/2008			RoHS
				DRAM Manuf: Micron, Dram Part#: MT47H128M8HQ-25E E (D9HNQ) rev E, Device Config: 128M x 8, Bank: 1
1GB	Avant Technology		4	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5		AVF6428U52E5667F6-MTBP	Micron	MT47H64M8CB-3 rev B	B62U838 1.0 rev 1	64M x 8	015200	4/29/2008			RoHS
				DRAM Manuf: Micron, Dram Part#: MT47H64M8CB-3 rev B, Device Config: 64M x 8, Bank: 2
2GB	ATP Electronics		3	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5		AJ56K64E8BJE6S	Samsung	K4T1G084QQ-HCE6 rev Q	D2U64E	128M x 8	015706	8/8/2008			RoHS
				DRAM Manuf: Samsung, Dram Part#: K4T1G084QQ-HCE6 rev Q, Device Config: 128M x 8, Bank: 2
1GB	ATP Electronics		3	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5		AJ28K64D8BJE6S	Samsung	K4T1G084QQ-HCE6 rev Q	D2U64D	128M x 8	015699	8/7/2008			RoHS
				DRAM Manuf: Samsung, Dram Part#: K4T1G084QQ-HCE6 rev Q, Device Config: 128M x 8, Bank: 1
2GB	Ventura Technology Group		1	Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM More Info<<<	5		D2-55DG107SV-555	Samsung	K4T1G084QQ-HCF7 rev Q	B62URCE 1.00 rev 1	128M x 8	015246	5/15/2008			Lead-Free
				DRAM Manuf: Samsung, Dram Part#: K4T1G084QQ-HCF7 rev Q, Device Config: 128M x 8, Bank: 2
1GB	STEC		1	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5		INT64Q8M128M8L-A03GYU	Qimonda	HYB18T512800B2F3S rev B2	D2U64E rev E	64M x 8	015270	5/28/2008			RoHS
				DRAM Manuf: Qimonda, Dram Part#: HYB18T512800B2F3S rev B2, Device Config: 64M x 8, Bank: 2
512MB	STEC		1	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5		INT64Q8M64M8L-A03GYU	Qimonda	HYB18T512800B2F3S rev B2	D2U64D rev D	64M x 8	015251	5/16/2008			RoHS
				DRAM Manuf: Qimonda, Dram Part#: HYB18T512800B2F3S rev B2, Device Config: 64M x 8, Bank: 1

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