The Memory Compatibility Experts

Search > Tested Motherboard > Results >>   Motherboard Manufacturer: Intel Code name: Model: D945GCLF Revision: -300 Motherboard Alerts: DDR 667 & 800 MHz validated to run at 533 MHz only Page >  Previuos   1   Next      Found: 8 Click here to view detailed module info >> Size Module Manufacturer Certified CRL Module Info CL Low Profile Part # DRAM Manufacturer DRAM Part # PCB Part # Device Config Test # Test Date Report EOL Env. Code   2GB Buffalo 15 Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM  More Info<<< 5 D2U800C-2GECJ Elpida E1108ACBG-8E-E rev C 2DUE28F-AA na 128M x 8 016213 1/8/2009   RoHS DRAM Manuf: Elpida, Dram Part#: E1108ACBG-8E-E rev C, Device Config: 128M x 8, Bank: 2 1GB Avant Technology 8 Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM  More Info<<< 5 AVF6428U61E5800F6-MTEP Micron MT47H128M8HQ-25E E (D9HNQ) rev E B62U838 1.0 rev 1 128M x 8 015199 4/30/2008   RoHS DRAM Manuf: Micron, Dram Part#: MT47H128M8HQ-25E E (D9HNQ) rev E, Device Config: 128M x 8, Bank: 1 1GB Avant Technology 4 Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM  More Info<<< 5 AVF6428U52E5667F6-MTBP Micron MT47H64M8CB-3 rev B B62U838 1.0 rev 1 64M x 8 015200 4/29/2008   RoHS DRAM Manuf: Micron, Dram Part#: MT47H64M8CB-3 rev B, Device Config: 64M x 8, Bank: 2 2GB ATP Electronics 3 Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM  More Info<<< 5 AJ56K64E8BJE6S Samsung K4T1G084QQ-HCE6 rev Q D2U64E 128M x 8 015706 8/8/2008   RoHS DRAM Manuf: Samsung, Dram Part#: K4T1G084QQ-HCE6 rev Q, Device Config: 128M x 8, Bank: 2 1GB ATP Electronics 3 Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM  More Info<<< 5 AJ28K64D8BJE6S Samsung K4T1G084QQ-HCE6 rev Q D2U64D 128M x 8 015699 8/7/2008   RoHS DRAM Manuf: Samsung, Dram Part#: K4T1G084QQ-HCE6 rev Q, Device Config: 128M x 8, Bank: 1 2GB Ventura Technology Group 1 Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM  More Info<<< 5 D2-55DG107SV-555 Samsung K4T1G084QQ-HCF7 rev Q B62URCE 1.00 rev 1 128M x 8 015246 5/15/2008   Lead-Free DRAM Manuf: Samsung, Dram Part#: K4T1G084QQ-HCF7 rev Q, Device Config: 128M x 8, Bank: 2 1GB STEC 1 Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM  More Info<<< 5 INT64Q8M128M8L-A03GYU Qimonda HYB18T512800B2F3S rev B2 D2U64E rev E 64M x 8 015270 5/28/2008   RoHS DRAM Manuf: Qimonda, Dram Part#: HYB18T512800B2F3S rev B2, Device Config: 64M x 8, Bank: 2 512MB STEC 1 Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM  More Info<<< 5 INT64Q8M64M8L-A03GYU Qimonda HYB18T512800B2F3S rev B2 D2U64D rev D 64M x 8 015251 5/16/2008   RoHS DRAM Manuf: Qimonda, Dram Part#: HYB18T512800B2F3S rev B2, Device Config: 64M x 8, Bank: 1 Page >  Previuos   1   Next

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