Search > Tested Motherboard > Results >>

|
|
| Motherboard Manufacturer: |
Intel |
Code name: |
|
| Model: |
(DQ35JO)/DQ35MP |
Revision: |
|
|
|
Motherboard Alerts: |
|
|
|
Size
|
Module Manufacturer
|
Certified
|
CRL
|
Module Info
|
CL
|
Low Profile
|
Part #
|
DRAM Manufacturer
|
DRAM Part #
|
PCB Part #
|
Device Config
|
Test #
|
Test Date
|
Report
|
EOL
|
Env. Code
|
|
| 2GB |
Ventura Technology Group
|
|
23
|
Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM
More Info<<<
|
5 |
|
D2-55CG64EV-555 |
Qimonda |
HYB18T1G800BF-3S rev B |
D2U72G na |
128M x 8 |
014074 |
7/18/2007 |
 |
|
RoHS
|
|
|
|
|
|
DRAM Manuf: Qimonda, Dram Part#: HYB18T1G800BF-3S rev B, Device Config: 128M x 8, Bank: 2 |
| 1GB |
Buffalo
|
|
22
|
Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM
More Info<<<
|
5 |
|
D2U800C-S1GECJ |
Elpida |
E1108ACBG-8E-E rev C |
2DUD18F-AA rev A |
128M x 8 |
016207 |
1/6/2009 |
 |
|
RoHS
|
|
|
|
|
|
DRAM Manuf: Elpida, Dram Part#: E1108ACBG-8E-E rev C, Device Config: 128M x 8, Bank: 1 |
| 2GB |
Buffalo
|
|
18
|
Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM
More Info<<<
|
5 |
|
D2U800CX-2GHCJ |
Hynix |
HY5PS1G831CFP-S5 rev C |
2D286NF3-AB |
128M x 8 |
016105 |
12/18/2008 |
 |
|
RoHS
|
|
|
|
|
|
DRAM Manuf: Hynix, Dram Part#: HY5PS1G831CFP-S5 rev C, Device Config: 128M x 8, Bank: 2 |
| 2GB |
Buffalo
|
|
18
|
Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM
More Info<<<
|
5 |
|
D2U800CX-2GECJ |
Elpida |
E1108ACBG-8E-E rev C |
2D286NF3-AB |
128M x 8 |
015675 |
8/5/2008 |
 |
|
RoHS
|
|
|
|
|
|
DRAM Manuf: Elpida, Dram Part#: E1108ACBG-8E-E rev C, Device Config: 128M x 8, Bank: 2 |
| 1GB |
Buffalo
|
|
17
|
Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM
More Info<<<
|
5 |
|
D2U800CX-S1GECJ |
Elpida |
E1108ACBG-8E-E rev C |
2D286NF3-AB |
128M x 8 |
016264 |
1/19/2009 |
 |
|
RoHS
|
|
|
|
|
|
DRAM Manuf: Elpida, Dram Part#: E1108ACBG-8E-E rev C, Device Config: 128M x 8, Bank: 1 |
| 2GB |
Buffalo
|
|
15
|
Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM
More Info<<<
|
5 |
|
D2U800C-2GECJ |
Elpida |
E1108ACBG-8E-E rev C |
2DUE28F-AA na |
128M x 8 |
015086 |
3/28/2008 |
 |
|
RoHS
|
|
|
|
|
|
DRAM Manuf: Elpida, Dram Part#: E1108ACBG-8E-E rev C, Device Config: 128M x 8, Bank: 2 |
| 2GB |
Smart Modular Technologies
|
|
15
|
Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM
More Info<<<
|
5 |
|
SG2566UDR212851ME |
Micron |
MT47H128M8HQ-25E rev E |
PG58G240LUBUB1RE rev B |
128M x 8 |
014420 |
10/2/2007 |
 |
|
RoHS
|
|
|
|
|
|
DRAM Manuf: Micron, Dram Part#: MT47H128M8HQ-25E rev E, Device Config: 128M x 8, Bank: 2 |
| 1GB |
Smart Modular Technologies
|
|
15
|
Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM
More Info<<<
|
5 |
|
SG1286UDR264851IB |
Qimonda (Infineon) |
HYB18T512800BF25F rev B |
PG58G240LUBUB1RE rev B |
64M x 8 |
014154 |
8/1/2007 |
 |
Yes
7/20/2009
Replacement
|
RoHS
|
|
|
|
|
|
DRAM Manuf: Qimonda (Infineon), Dram Part#: HYB18T512800BF25F rev B, Device Config: 64M x 8, Bank: 2 |
| 1GB |
Smart Modular Technologies
|
|
14
|
Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM
More Info<<<
|
5 |
|
SG1286UDR264851NB |
Nanya |
NT5TU64M8BE-25C rev B |
PG58G240LUBUB1RE rev B |
64M x 8 |
014051 |
7/31/2007 |
 |
|
RoHS
|
|
|
|
|
|
DRAM Manuf: Nanya, Dram Part#: NT5TU64M8BE-25C rev B, Device Config: 64M x 8, Bank: 2 |
| 2GB |
Legacy Electronics Inc.
|
|
12
|
Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM
More Info<<<
|
5 |
|
M526NAE20EC-30R |
Micron |
MT47H128M8HQ-3 rev E |
D2U64E rev E |
128M x 8 |
014237 |
8/15/2007 |
 |
|
RoHS
|
|
|
|
|
|
DRAM Manuf: Micron, Dram Part#: MT47H128M8HQ-3 rev E, Device Config: 128M x 8, Bank: 2 |
| 1GB |
Buffalo
|
|
12
|
Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM
More Info<<<
|
5 |
|
D2U667C-1GEJJ |
Elpida |
E5108AJBG-6E-E rev J |
2DUE28F-AA na |
64M x 8 |
014848 |
1/30/2008 |
 |
|
RoHS
|
|
|
|
|
|
DRAM Manuf: Elpida, Dram Part#: E5108AJBG-6E-E rev J, Device Config: 64M x 8, Bank: 2 |
| 2GB |
Buffalo
|
|
11
|
Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM
More Info<<<
|
5 |
|
D2U667C-2GECJ |
Elpida |
E1108ACBG-6E-E rev C |
2DUE28F-AA na |
128M x 8 |
015068 |
3/20/2008 |
 |
|
RoHS
|
|
|
|
|
|
DRAM Manuf: Elpida, Dram Part#: E1108ACBG-6E-E rev C, Device Config: 128M x 8, Bank: 2 |
| 1GB |
ATP Electronics
|
|
11
|
Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM
More Info<<<
|
5 |
|
AJ28K64E8BHE7S |
Samsung |
K4T51083QE-ZCE7 rev E |
SJ240E08K1 na |
64M x 8 |
014538 |
11/12/2007 |
 |
|
RoHS
|
|
|
|
|
|
DRAM Manuf: Samsung, Dram Part#: K4T51083QE-ZCE7 rev E, Device Config: 64M x 8, Bank: 2 |
| 1GB |
Smart Modular Technologies
|
|
11
|
Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM
More Info<<<
|
5 |
|
SG1286UDR264852-IC |
Qimonda |
HYB18T512800CF3S rev C |
K0705 |
64M x 8 |
014213 |
8/14/2007 |
 |
Yes
7/21/2009
Replacement
|
RoHS
|
|
|
|
|
|
DRAM Manuf: Qimonda, Dram Part#: HYB18T512800CF3S rev C, Device Config: 64M x 8, Bank: 2 |
| 512MB |
Smart Modular Technologies
|
|
11
|
Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM
More Info<<<
|
5 |
|
SG646UDR264852-SE |
Samsung |
K4T51083QE-ZCE6 rev E |
M378T6553CZS na |
64M x 8 |
014197 |
8/7/2007 |
 |
Yes
7/21/2009
Replacement
|
RoHS
|
|
|
|
|
|
DRAM Manuf: Samsung, Dram Part#: K4T51083QE-ZCE6 rev E, Device Config: 64M x 8, Bank: 1 |
| 2GB |
Buffalo
|
|
9
|
Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM
More Info<<<
|
5 |
|
D2U667C-2GMEJ |
Micron |
MT47H128M8HQ-3 rev E |
2DUE28F-AA na |
128M x 8 |
014058 |
7/12/2007 |
 |
|
RoHS
|
|
|
|
|
|
DRAM Manuf: Micron, Dram Part#: MT47H128M8HQ-3 rev E, Device Config: 128M x 8, Bank: 2 |
| 1GB |
Avant Technology
|
|
8
|
Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM
More Info<<<
|
5 |
|
AVF6428U61E5800F6-MTEP |
Micron |
MT47H128M8HQ-25E E (D9HNQ) rev E |
B62U838 1.0 rev 1 |
128M x 8 |
014374 |
9/27/2007 |
 |
|
RoHS
|
|
|
|
|
|
DRAM Manuf: Micron, Dram Part#: MT47H128M8HQ-25E E (D9HNQ) rev E, Device Config: 128M x 8, Bank: 1 |
| 1GB |
Buffalo
|
|
8
|
Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM
More Info<<<
|
5 |
|
D2U667C-1G/EGJ |
Elpida |
E5108AG(BG)-6E-E rev G |
2DUE28F-AA na |
64M x 8 |
014526 |
10/26/2007 |
 |
|
Lead-Free
|
|
|
|
|
|
DRAM Manuf: Elpida, Dram Part#: E5108AG(BG)-6E-E rev G, Device Config: 64M x 8, Bank: 2 |
| 1GB |
Legacy Electronics Inc.
|
|
8
|
Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM
More Info<<<
|
5 |
|
B516K4C2AEC-25R |
Samsung |
K4T51083QC-ZCE7 rev C |
LE16D2FG38URE rev A |
64M x 8 |
014006 |
6/29/2007 |
 |
|
RoHS
|
|
|
|
|
|
DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE7 rev C, Device Config: 64M x 8, Bank: 2 |
| 1GB |
Avant Technology
|
|
7
|
Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM
More Info<<<
|
5 |
|
AVF6428U52E5800F4-ELHP |
Elpida |
EDE5108AHSE-8E-E rev H |
B62URCE 1.00 rev 1 |
64M x 8 |
014399 |
9/26/2007 |
 |
|
RoHS
|
|
|
|
|
|
DRAM Manuf: Elpida, Dram Part#: EDE5108AHSE-8E-E rev H, Device Config: 64M x 8, Bank: 2 |
|