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Motherboard Manufacturer:	Intel	Code name:
Model:	(D946GZIS)/D946GZAB	Revision:

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Found: 12

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Size	Module Manufacturer	CRL	Module Info	CL	Part #	DRAM Manufacturer	DRAM Part #	PCB Part #	Device Config	Test #	Test Date	EOL	Env. Code
1GB	Ventura Technology Group	21	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2-53CD64SV-555	Samsung	K4T51083QC-ZCE6 rev C	D2U72G rev 1.0	64M x 8	013020	1/9/2007		Lead-Free
			DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE6 rev C, Device Config: 64M x 8, Bank: 2
512MB	Ventura Technology Group	21	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2-51CD63SV-555	Samsung	K4T51083QC-ZCE6 rev C	D2U72F na	64M x 8	013402	3/2/2007		Lead-Free
			DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE6 rev C, Device Config: 64M x 8, Bank: 1
1GB	ATP Electronics	18	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	AJ28K64E8BHE6S	Samsung	K4T51083QE-ZCE6 rev E	SJ240E08K1 na	64M x 8	013183	1/29/2007		RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T51083QE-ZCE6 rev E, Device Config: 64M x 8, Bank: 2
512MB	ATP Electronics	18	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	AJ64K64D8BHE6S	Samsung	K4T51083QE-ZCE6 rev E	D2U64D na	64M x 8	013156	1/30/2007		RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T51083QE-ZCE6 rev E, Device Config: 64M x 8, Bank: 1
1GB	ATP Electronics	8	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	AJ28K64E8BHE6S	Samsung	K4T51083QC-ZCE6 rev C	SJ240E08K1	64M x 8	012239	9/11/2006	Yes 1/19/2007 Replacement	RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE6 rev C, Device Config: 64M x 8, Bank: 2
512MB	ATP Electronics	7	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	AJ64K64D8BHE6S	Samsung	K4T51083QC-ZCE6 rev C	SJ240D08K1	64M x 8	012241	9/12/2006	Yes 1/19/2007 Replacement	RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE6 rev C, Device Config: 64M x 8, Bank: 1
512MB	Buffalo	7	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2U667C-S512MDJ	Micron	MT47H64M8B6-3 rev D	2DUD18F-AA na	64M x 8	012465	10/27/2006		RoHS
			DRAM Manuf: Micron, Dram Part#: MT47H64M8B6-3 rev D, Device Config: 64M x 8, Bank: 1
1GB	Buffalo	6	Non-ECC, Unbuffered, 533Mhz, Synch 3.75ns, DDR2 DIMM More Info<<<	4	D2U533B-1GMDJ	Micron	MT47H64M8B6-37E rev D	2DUE28F-AA na	64M x 8	013335	2/20/2007		RoHS
			DRAM Manuf: Micron, Dram Part#: MT47H64M8B6-37E rev D, Device Config: 64M x 8, Bank: 2
1GB	Buffalo	5	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2U667C-1GMDJ	Micron	MT47H64M8B6-3 rev D	2DUE28F-AA na	64M x 8	013336	2/22/2007		RoHS
			DRAM Manuf: Micron, Dram Part#: MT47H64M8B6-3 rev D, Device Config: 64M x 8, Bank: 2
1GB	Buffalo	5	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2U667C-S1GMEJ	Micron	MT47H128M8HQ-3 rev E	2DUD18F-AA na	128M x 8	013923	6/6/2007		RoHS
			DRAM Manuf: Micron, Dram Part#: MT47H128M8HQ-3 rev E, Device Config: 128M x 8, Bank: 1
1GB	Apacer	4	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	78.01G92.404	Samsung	K4T51083QE-ZCE6 rev E	48.16193.094 rev 4	64M x 8	014696	12/21/2007		RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T51083QE-ZCE6 rev E, Device Config: 64M x 8, Bank: 2
1GB	Buffalo	3	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2U667C-1GHBJ	Hynix	HY5PS12821B FP-Y5 rev B	2DUE28F-AA na	64M x 8	014288	9/14/2007		Lead-Free
			DRAM Manuf: Hynix, Dram Part#: HY5PS12821B FP-Y5 rev B, Device Config: 64M x 8, Bank: 2

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