The Memory Compatibility Experts

Search > Tested Motherboard > Results >>   Motherboard Manufacturer: Intel Code name: Model: (D946GZIS)/D946GZAB Revision: Motherboard Alerts: Page >  Previuos   1   Next      Found: 12 Click here to view detailed module info >> Size Module Manufacturer Certified CRL Module Info CL Low Profile Part # DRAM Manufacturer DRAM Part # PCB Part # Device Config Test # Test Date Report EOL Env. Code   1GB Ventura Technology Group 21 Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM  More Info<<< 5 D2-53CD64SV-555 Samsung K4T51083QC-ZCE6 rev C D2U72G rev 1.0 64M x 8 013020 1/9/2007   Lead-Free DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE6 rev C, Device Config: 64M x 8, Bank: 2 512MB Ventura Technology Group 21 Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM  More Info<<< 5 D2-51CD63SV-555 Samsung K4T51083QC-ZCE6 rev C D2U72F na 64M x 8 013402 3/2/2007   Lead-Free DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE6 rev C, Device Config: 64M x 8, Bank: 1 1GB ATP Electronics 18 Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM  More Info<<< 5 AJ28K64E8BHE6S Samsung K4T51083QE-ZCE6 rev E SJ240E08K1 na 64M x 8 013183 1/29/2007   RoHS DRAM Manuf: Samsung, Dram Part#: K4T51083QE-ZCE6 rev E, Device Config: 64M x 8, Bank: 2 512MB ATP Electronics 18 Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM  More Info<<< 5 AJ64K64D8BHE6S Samsung K4T51083QE-ZCE6 rev E D2U64D na 64M x 8 013156 1/30/2007   RoHS DRAM Manuf: Samsung, Dram Part#: K4T51083QE-ZCE6 rev E, Device Config: 64M x 8, Bank: 1 1GB ATP Electronics 8 Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM  More Info<<< 5 AJ28K64E8BHE6S Samsung K4T51083QC-ZCE6 rev C SJ240E08K1 64M x 8 012239 9/11/2006 Yes 1/19/2007 Replacement RoHS DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE6 rev C, Device Config: 64M x 8, Bank: 2 512MB ATP Electronics 7 Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM  More Info<<< 5 AJ64K64D8BHE6S Samsung K4T51083QC-ZCE6 rev C SJ240D08K1 64M x 8 012241 9/12/2006 Yes 1/19/2007 Replacement RoHS DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE6 rev C, Device Config: 64M x 8, Bank: 1 512MB Buffalo 7 Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM  More Info<<< 5 D2U667C-S512MDJ Micron MT47H64M8B6-3 rev D 2DUD18F-AA na 64M x 8 012465 10/27/2006   RoHS DRAM Manuf: Micron, Dram Part#: MT47H64M8B6-3 rev D, Device Config: 64M x 8, Bank: 1 1GB Buffalo 6 Non-ECC, Unbuffered, 533Mhz, Synch 3.75ns, DDR2 DIMM  More Info<<< 4 D2U533B-1GMDJ Micron MT47H64M8B6-37E rev D 2DUE28F-AA na 64M x 8 013335 2/20/2007   RoHS DRAM Manuf: Micron, Dram Part#: MT47H64M8B6-37E rev D, Device Config: 64M x 8, Bank: 2 1GB Buffalo 5 Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM  More Info<<< 5 D2U667C-1GMDJ Micron MT47H64M8B6-3 rev D 2DUE28F-AA na 64M x 8 013336 2/22/2007   RoHS DRAM Manuf: Micron, Dram Part#: MT47H64M8B6-3 rev D, Device Config: 64M x 8, Bank: 2 1GB Buffalo 5 Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM  More Info<<< 5 D2U667C-S1GMEJ Micron MT47H128M8HQ-3 rev E 2DUD18F-AA na 128M x 8 013923 6/6/2007   RoHS DRAM Manuf: Micron, Dram Part#: MT47H128M8HQ-3 rev E, Device Config: 128M x 8, Bank: 1 1GB Apacer 4 Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM  More Info<<< 5 78.01G92.404 Samsung K4T51083QE-ZCE6 rev E 48.16193.094 rev 4 64M x 8 014696 12/21/2007   RoHS DRAM Manuf: Samsung, Dram Part#: K4T51083QE-ZCE6 rev E, Device Config: 64M x 8, Bank: 2 1GB Buffalo 3 Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM  More Info<<< 5 D2U667C-1GHBJ Hynix HY5PS12821B FP-Y5 rev B 2DUE28F-AA na 64M x 8 014288 9/14/2007   Lead-Free DRAM Manuf: Hynix, Dram Part#: HY5PS12821B FP-Y5 rev B, Device Config: 64M x 8, Bank: 2 Page >  Previuos   1   Next

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