The Memory Compatibility Experts

Search > Tested Motherboard > Results >>   Motherboard Manufacturer: Intel Code name: Model: DQ965WC/DG965PZ Revision: Motherboard Alerts: Page >  Previuos   1   2    3    Next      Found: 53 Click here to view detailed module info >> Size Module Manufacturer Certified CRL Module Info CL Low Profile Part # DRAM Manufacturer DRAM Part # PCB Part # Device Config Test # Test Date Report EOL Env. Code   2GB Ventura Technology Group 23 Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM  More Info<<< 5 D2-55CG64EV-555 Qimonda HYB18T1G800BF-3S rev B D2U72G na 128M x 8 014086 7/19/2007   RoHS DRAM Manuf: Qimonda, Dram Part#: HYB18T1G800BF-3S rev B, Device Config: 128M x 8, Bank: 2 1GB Ventura Technology Group 21 Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM  More Info<<< 5 D2-53CD64SV-555 Samsung K4T51083QC-ZCE6 rev C D2U72G rev 1.0 64M x 8 012978 1/8/2007   Lead-Free DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE6 rev C, Device Config: 64M x 8, Bank: 2 512MB Ventura Technology Group 21 Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM  More Info<<< 5 D2-51CD63SV-555 Samsung K4T51083QC-ZCE6 rev C D2U72F na 64M x 8 012697 12/21/2006   Lead-Free DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE6 rev C, Device Config: 64M x 8, Bank: 1 2GB Buffalo 18 Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM  More Info<<< 5 D2U800CX-2GHCJ Hynix HY5PS1G831CFP-S5 rev C 2D286NF3-AB 128M x 8 016199 1/7/2009   RoHS DRAM Manuf: Hynix, Dram Part#: HY5PS1G831CFP-S5 rev C, Device Config: 128M x 8, Bank: 2 1GB ATP Electronics 18 Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM  More Info<<< 5 AJ28K64E8BHE6S Samsung K4T51083QE-ZCE6 rev E SJ240E08K1 na 64M x 8 013186 2/5/2007   RoHS DRAM Manuf: Samsung, Dram Part#: K4T51083QE-ZCE6 rev E, Device Config: 64M x 8, Bank: 2 512MB ATP Electronics 18 Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM  More Info<<< 5 AJ64K64D8BHE6S Samsung K4T51083QE-ZCE6 rev E D2U64D na 64M x 8 013159 2/2/2007   RoHS DRAM Manuf: Samsung, Dram Part#: K4T51083QE-ZCE6 rev E, Device Config: 64M x 8, Bank: 1 2GB Smart Modular Technologies 15 Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM  More Info<<< 5 SG2566UDR212851ME Micron MT47H128M8HQ-25E rev E PG58G240LUBUB1RE rev B 128M x 8 014427 10/17/2007   RoHS DRAM Manuf: Micron, Dram Part#: MT47H128M8HQ-25E rev E, Device Config: 128M x 8, Bank: 2 1GB Smart Modular Technologies 15 Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM  More Info<<< 5 SG1286UDR264851IB Qimonda (Infineon) HYB18T512800BF25F rev B PG58G240LUBUB1RE rev B 64M x 8 012657 11/16/2006 Yes 7/20/2009 Replacement RoHS DRAM Manuf: Qimonda (Infineon), Dram Part#: HYB18T512800BF25F rev B, Device Config: 64M x 8, Bank: 2 2GB Smart Modular Technologies 14 Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM  More Info<<< 5 SG2566UDR212852IB Qimonda HYB18T1G800BF-3S rev B PG58G240LUBUB1RE rev B 128M x 8 013901 5/21/2007 Yes 7/21/2009 Replacement RoHS DRAM Manuf: Qimonda, Dram Part#: HYB18T1G800BF-3S rev B, Device Config: 128M x 8, Bank: 2 1GB Smart Modular Technologies 14 Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM  More Info<<< 5 SG1286UDR264851NB Nanya NT5TU64M8BE-25C rev B PG58G240LUBUB1RE rev B 64M x 8 012420 11/8/2006   RoHS DRAM Manuf: Nanya, Dram Part#: NT5TU64M8BE-25C rev B, Device Config: 64M x 8, Bank: 2 1GB Smart Modular Technologies 11 Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM  More Info<<< 5 SG1286UDR264852-IC Qimonda HYB18T512800CF3S rev C K0705 64M x 8 014223 8/27/2007 Yes 7/21/2009 Replacement RoHS DRAM Manuf: Qimonda, Dram Part#: HYB18T512800CF3S rev C, Device Config: 64M x 8, Bank: 2 1GB Ventura Technology Group 11 Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM  More Info<<< 5 D2-53DD95SV-555 Samsung K4T51083QC-ZCE7 rev C D2U64E na 64M x 8 013987 7/24/2007   RoHS DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE7 rev C, Device Config: 64M x 8, Bank: 2 512MB Smart Modular Technologies 11 Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM  More Info<<< 5 SG646UDR264852-SE Samsung K4T51083QE-ZCE6 rev E M378T6553CZS na 64M x 8 014207 8/15/2007 Yes 7/21/2009 Replacement RoHS DRAM Manuf: Samsung, Dram Part#: K4T51083QE-ZCE6 rev E, Device Config: 64M x 8, Bank: 1 512MB Ventura Technology Group 11 Non-ECC, Unbuffered, 800MHz, Synch 2.5ns, DDR2 DIMM  More Info<<< 5 D2-51DD93SV-555 Samsung K4T51083QC-ZCE7 rev C D2U64D na 64M x 8 013976 7/25/2007   RoHS DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE7 rev C, Device Config: 64M x 8, Bank: 1 512MB Smart Modular Technologies 10 Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM  More Info<<< 5 SG646UDR264851NB Nanya NT5TU64M8BE-25C rev B PG54G240LUBUB1RD rev A 64M x 8 012433 11/10/2006 Yes 7/21/2009 Replacement RoHS DRAM Manuf: Nanya, Dram Part#: NT5TU64M8BE-25C rev B, Device Config: 64M x 8, Bank: 1 2GB ATP Electronics 9 Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM  More Info<<< 5 AJ56K64E8BJE6S Samsung K4T1G084QA-ZCE6 rev A SJ240E08K1 na 128M x 8 013400 3/12/2007 Yes 10/30/2007 Replacement RoHS DRAM Manuf: Samsung, Dram Part#: K4T1G084QA-ZCE6 rev A, Device Config: 128M x 8, Bank: 2 1GB ATP Electronics 9 Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM  More Info<<< 5 AJ28K64E8BHE7S Samsung K4T51083QC-ZCE7 rev C SJ240E08K1 na 64M x 8 012235 11/3/2006 Yes 10/23/2007 Replacement RoHS DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE7 rev C, Device Config: 64M x 8, Bank: 2 1GB Smart Modular Technologies 9 Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM  More Info<<< 6 SG1286UDR64861-IB Qimonda (Infineon) HYB18T512800BF25 rev B K0602 (240-9-1) 64M x 8 012344 11/6/2006 Yes 7/21/2009 Replacement RoHS DRAM Manuf: Qimonda (Infineon), Dram Part#: HYB18T512800BF25 rev B, Device Config: 64M x 8, Bank: 2 512MB ATP Electronics 9 Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM  More Info<<< 5 AJ64K64D8BHE7S Samsung K4T51083QC-ZCE7 rev C SJ240D08K1 na 64M x 8 012226 11/1/2006 Yes 10/2/2007 Replacement RoHS DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE7 rev C, Device Config: 64M x 8, Bank: 1 512MB Smart Modular Technologies 9 Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM  More Info<<< 5 SG646UDR264851IB Qimonda (Infineon) HYB18T512800BF-25F rev B PG54G240LUBUB1RD rev A 64M x 8 012257 10/31/2006 Yes 7/21/2009 Replacement RoHS DRAM Manuf: Qimonda (Infineon), Dram Part#: HYB18T512800BF-25F rev B, Device Config: 64M x 8, Bank: 1 Page >  Previuos   1   2    3    Next

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