Search > Tested Motherboard > Results >>

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| Motherboard Manufacturer: |
Intel |
Code name: |
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| Model: |
DQ965CO |
Revision: |
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Motherboard Alerts: |
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Size
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Module Manufacturer
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Certified
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CRL
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Module Info
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CL
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Low Profile
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Part #
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DRAM Manufacturer
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DRAM Part #
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PCB Part #
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Device Config
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Test #
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Test Date
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Report
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EOL
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Env. Code
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| 2GB |
Ventura Technology Group
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23
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Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM
More Info<<<
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5 |
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D2-55CG64EV-555 |
Qimonda |
HYB18T1G800BF-3S rev B |
D2U72G na |
128M x 8 |
014085 |
7/23/2007 |
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RoHS
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DRAM Manuf: Qimonda, Dram Part#: HYB18T1G800BF-3S rev B, Device Config: 128M x 8, Bank: 2 |
| 1GB |
Ventura Technology Group
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21
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Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM
More Info<<<
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5 |
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D2-53CD64SV-555 |
Samsung |
K4T51083QC-ZCE6 rev C |
D2U72G rev 1.0 |
64M x 8 |
012977 |
1/8/2007 |
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Lead-Free
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DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE6 rev C, Device Config: 64M x 8, Bank: 2 |
| 512MB |
Ventura Technology Group
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21
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Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM
More Info<<<
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5 |
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D2-51CD63SV-555 |
Samsung |
K4T51083QC-ZCE6 rev C |
D2U72F na |
64M x 8 |
012698 |
1/3/2007 |
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Lead-Free
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DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE6 rev C, Device Config: 64M x 8, Bank: 1 |
| 1GB |
ATP Electronics
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18
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Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM
More Info<<<
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5 |
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AJ28K64E8BHE6S |
Samsung |
K4T51083QE-ZCE6 rev E |
SJ240E08K1 na |
64M x 8 |
013181 |
2/8/2007 |
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RoHS
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DRAM Manuf: Samsung, Dram Part#: K4T51083QE-ZCE6 rev E, Device Config: 64M x 8, Bank: 2 |
| 512MB |
ATP Electronics
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18
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Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM
More Info<<<
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5 |
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AJ64K64D8BHE6S |
Samsung |
K4T51083QE-ZCE6 rev E |
D2U64D na |
64M x 8 |
013165 |
2/9/2007 |
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RoHS
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DRAM Manuf: Samsung, Dram Part#: K4T51083QE-ZCE6 rev E, Device Config: 64M x 8, Bank: 1 |
| 2GB |
Smart Modular Technologies
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15
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Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM
More Info<<<
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5 |
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SG2566UDR212851ME |
Micron |
MT47H128M8HQ-25E rev E |
PG58G240LUBUB1RE rev B |
128M x 8 |
014426 |
10/16/2007 |
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RoHS
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DRAM Manuf: Micron, Dram Part#: MT47H128M8HQ-25E rev E, Device Config: 128M x 8, Bank: 2 |
| 1GB |
Smart Modular Technologies
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15
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Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM
More Info<<<
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5 |
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SG1286UDR264851IB |
Qimonda (Infineon) |
HYB18T512800BF25F rev B |
PG58G240LUBUB1RE rev B |
64M x 8 |
012656 |
11/13/2006 |
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Yes
7/20/2009
Replacement
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RoHS
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DRAM Manuf: Qimonda (Infineon), Dram Part#: HYB18T512800BF25F rev B, Device Config: 64M x 8, Bank: 2 |
| 2GB |
Smart Modular Technologies
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14
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Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM
More Info<<<
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5 |
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SG2566UDR212852IB |
Qimonda |
HYB18T1G800BF-3S rev B |
PG58G240LUBUB1RE rev B |
128M x 8 |
013899 |
8/6/2007 |
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Yes
7/21/2009
Replacement
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RoHS
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DRAM Manuf: Qimonda, Dram Part#: HYB18T1G800BF-3S rev B, Device Config: 128M x 8, Bank: 2 |
| 1GB |
Smart Modular Technologies
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14
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Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM
More Info<<<
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5 |
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SG1286UDR264851NB |
Nanya |
NT5TU64M8BE-25C rev B |
PG58G240LUBUB1RE rev B |
64M x 8 |
012422 |
10/9/2006 |
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RoHS
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DRAM Manuf: Nanya, Dram Part#: NT5TU64M8BE-25C rev B, Device Config: 64M x 8, Bank: 2 |
| 1GB |
Smart Modular Technologies
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11
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Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM
More Info<<<
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5 |
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SG1286UDR264852-IC |
Qimonda |
HYB18T512800CF3S rev C |
K0705 |
64M x 8 |
014221 |
8/24/2007 |
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Yes
7/21/2009
Replacement
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RoHS
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DRAM Manuf: Qimonda, Dram Part#: HYB18T512800CF3S rev C, Device Config: 64M x 8, Bank: 2 |
| 1GB |
Ventura Technology Group
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11
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Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM
More Info<<<
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5 |
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D2-53DD95SV-555 |
Samsung |
K4T51083QC-ZCE7 rev C |
D2U64E na |
64M x 8 |
013985 |
8/8/2007 |
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RoHS
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DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE7 rev C, Device Config: 64M x 8, Bank: 2 |
| 512MB |
Smart Modular Technologies
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11
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Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM
More Info<<<
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5 |
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SG646UDR264852-SE |
Samsung |
K4T51083QE-ZCE6 rev E |
M378T6553CZS na |
64M x 8 |
014203 |
8/20/2007 |
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Yes
7/21/2009
Replacement
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RoHS
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DRAM Manuf: Samsung, Dram Part#: K4T51083QE-ZCE6 rev E, Device Config: 64M x 8, Bank: 1 |
| 512MB |
Ventura Technology Group
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11
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Non-ECC, Unbuffered, 800MHz, Synch 2.5ns, DDR2 DIMM
More Info<<<
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5 |
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D2-51DD93SV-555 |
Samsung |
K4T51083QC-ZCE7 rev C |
D2U64D na |
64M x 8 |
013974 |
8/9/2007 |
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RoHS
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DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE7 rev C, Device Config: 64M x 8, Bank: 1 |
| 512MB |
Smart Modular Technologies
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10
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Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM
More Info<<<
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5 |
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SG646UDR264851NB |
Nanya |
NT5TU64M8BE-25C rev B |
PG54G240LUBUB1RD rev A |
64M x 8 |
012431 |
10/4/2006 |
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Yes
7/21/2009
Replacement
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RoHS
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DRAM Manuf: Nanya, Dram Part#: NT5TU64M8BE-25C rev B, Device Config: 64M x 8, Bank: 1 |
| 2GB |
ATP Electronics
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9
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Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM
More Info<<<
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5 |
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AJ56K64E8BJE6S |
Samsung |
K4T1G084QA-ZCE6 rev A |
SJ240E08K1 na |
128M x 8 |
013398 |
3/8/2007 |
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Yes
10/30/2007
Replacement
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RoHS
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DRAM Manuf: Samsung, Dram Part#: K4T1G084QA-ZCE6 rev A, Device Config: 128M x 8, Bank: 2 |
| 2GB |
Buffalo
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9
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Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM
More Info<<<
|
5 |
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D2U667C-2GMEJ |
Micron |
MT47H128M8HQ-3 rev E |
2DUE28F-AA na |
128M x 8 |
014590 |
11/7/2007 |
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RoHS
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DRAM Manuf: Micron, Dram Part#: MT47H128M8HQ-3 rev E, Device Config: 128M x 8, Bank: 2 |
| 1GB |
ATP Electronics
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9
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Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM
More Info<<<
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5 |
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AJ28K64E8BHE7S |
Samsung |
K4T51083QC-ZCE7 rev C |
SJ240E08K1 na |
64M x 8 |
012236 |
9/21/2006 |
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Yes
10/23/2007
Replacement
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RoHS
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DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE7 rev C, Device Config: 64M x 8, Bank: 2 |
| 1GB |
Smart Modular Technologies
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9
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Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM
More Info<<<
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6 |
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SG1286UDR64861-IB |
Qimonda (Infineon) |
HYB18T512800BF25 rev B |
K0602 (240-9-1) |
64M x 8 |
012345 |
10/2/2006 |
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Yes
7/21/2009
Replacement
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RoHS
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DRAM Manuf: Qimonda (Infineon), Dram Part#: HYB18T512800BF25 rev B, Device Config: 64M x 8, Bank: 2 |
| 512MB |
ATP Electronics
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9
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Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM
More Info<<<
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5 |
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AJ64K64D8BHE7S |
Samsung |
K4T51083QC-ZCE7 rev C |
SJ240D08K1 na |
64M x 8 |
012228 |
9/20/2006 |
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Yes
10/2/2007
Replacement
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RoHS
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DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE7 rev C, Device Config: 64M x 8, Bank: 1 |
| 512MB |
Smart Modular Technologies
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9
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Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM
More Info<<<
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6 |
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SG646UDR64861-IB |
Qimonda (Infineon) |
HYB18T512800BF-25 rev B |
240-8-2 na |
64M x 8 |
012215 |
8/29/2006 |
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Yes
7/21/2009
Replacement
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RoHS
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DRAM Manuf: Qimonda (Infineon), Dram Part#: HYB18T512800BF-25 rev B, Device Config: 64M x 8, Bank: 1 |
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