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Motherboard Manufacturer:	Intel	Code name:
Model:	DG965RY/DQ963FX/(DP965LT)	Revision:	-200

Motherboard Alerts:

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Found: 44

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Size	Module Manufacturer	CRL	Module Info	CL	Part #	DRAM Manufacturer	DRAM Part #	PCB Part #	Device Config	Test #	Test Date	EOL	Env. Code
2GB	Ventura Technology Group	23	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2-55CG64EV-555	Qimonda	HYB18T1G800BF-3S rev B	D2U72G na	128M x 8	014082	7/17/2007		RoHS
			DRAM Manuf: Qimonda, Dram Part#: HYB18T1G800BF-3S rev B, Device Config: 128M x 8, Bank: 2
1GB	Ventura Technology Group	21	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2-53CD64SV-555	Samsung	K4T51083QC-ZCE6 rev C	D2U72G rev 1.0	64M x 8	012685	12/23/2006		Lead-Free
			DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE6 rev C, Device Config: 64M x 8, Bank: 2
512MB	Ventura Technology Group	21	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2-51CD63SV-555	Samsung	K4T51083QC-ZCE6 rev C	D2U72F na	64M x 8	012702	1/5/2007		Lead-Free
			DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE6 rev C, Device Config: 64M x 8, Bank: 1
1GB	Buffalo	20	Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM More Info<<<	5	D2U800C-S1GECJ	Elpida	E1108ACBG-8E-E rev C	2DUD18F-AA rev A	128M x 8	016208	1/7/2009		RoHS
			DRAM Manuf: Elpida, Dram Part#: E1108ACBG-8E-E rev C, Device Config: 128M x 8, Bank: 1
2GB	Buffalo	18	Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM More Info<<<	5	D2U800CX-2GHCJ	Hynix	HY5PS1G831CFP-S5 rev C	2D286NF3-AB	128M x 8	016198	1/8/2009		RoHS
			DRAM Manuf: Hynix, Dram Part#: HY5PS1G831CFP-S5 rev C, Device Config: 128M x 8, Bank: 2
1GB	ATP Electronics	18	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	AJ28K64E8BHE6S	Samsung	K4T51083QE-ZCE6 rev E	SJ240E08K1 na	64M x 8	013180	1/26/2007		RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T51083QE-ZCE6 rev E, Device Config: 64M x 8, Bank: 2
512MB	ATP Electronics	18	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	AJ64K64D8BHE6S	Samsung	K4T51083QE-ZCE6 rev E	D2U64D na	64M x 8	013158	2/12/2007		RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T51083QE-ZCE6 rev E, Device Config: 64M x 8, Bank: 1
2GB	Buffalo	17	Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM More Info<<<	5	D2U800CX-2GECJ	Elpida	E1108ACBG-8E-E rev C	2D286NF3-AB	128M x 8	016202	1/6/2009		RoHS
			DRAM Manuf: Elpida, Dram Part#: E1108ACBG-8E-E rev C, Device Config: 128M x 8, Bank: 2
1GB	Buffalo	16	Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM More Info<<<	5	D2U800CX-S1GECJ	Elpida	E1108ACBG-8E-E rev C	2D286NF3-AB	128M x 8	016267	1/22/2009		RoHS
			DRAM Manuf: Elpida, Dram Part#: E1108ACBG-8E-E rev C, Device Config: 128M x 8, Bank: 1
2GB	Smart Modular Technologies	15	Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM More Info<<<	5	SG2566UDR212851ME	Micron	MT47H128M8HQ-25E rev E	PG58G240LUBUB1RE rev B	128M x 8	014461	10/23/2007		RoHS
			DRAM Manuf: Micron, Dram Part#: MT47H128M8HQ-25E rev E, Device Config: 128M x 8, Bank: 2
1GB	Smart Modular Technologies	15	Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM More Info<<<	5	SG1286UDR264851IB	Qimonda (Infineon)	HYB18T512800BF25F rev B	PG58G240LUBUB1RE rev B	64M x 8	012721	11/15/2006	Yes 7/20/2009 Replacement	RoHS
			DRAM Manuf: Qimonda (Infineon), Dram Part#: HYB18T512800BF25F rev B, Device Config: 64M x 8, Bank: 2
2GB	Smart Modular Technologies	14	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	SG2566UDR212852IB	Qimonda	HYB18T1G800BF-3S rev B	PG58G240LUBUB1RE rev B	128M x 8	013908	8/10/2007	Yes 7/21/2009 Replacement	RoHS
			DRAM Manuf: Qimonda, Dram Part#: HYB18T1G800BF-3S rev B, Device Config: 128M x 8, Bank: 2
1GB	Smart Modular Technologies	14	Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM More Info<<<	5	SG1286UDR264851NB	Nanya	NT5TU64M8BE-25C rev B	PG58G240LUBUB1RE rev B	64M x 8	012724	11/29/2006		RoHS
			DRAM Manuf: Nanya, Dram Part#: NT5TU64M8BE-25C rev B, Device Config: 64M x 8, Bank: 2
2GB	Buffalo	11	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2U667C-2GECJ	Elpida	E1108ACBG-6E-E rev C	2DUE28F-AA na	128M x 8	015070	3/24/2008		RoHS
			DRAM Manuf: Elpida, Dram Part#: E1108ACBG-6E-E rev C, Device Config: 128M x 8, Bank: 2
1GB	ATP Electronics	11	Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM More Info<<<	5	AJ28K64E8BHE7S	Samsung	K4T51083QE-ZCE7 rev E	SJ240E08K1 na	64M x 8	015522	6/27/2008		RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T51083QE-ZCE7 rev E, Device Config: 64M x 8, Bank: 2
1GB	Ventura Technology Group	11	Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM More Info<<<	5	D2-53DD95SV-555	Samsung	K4T51083QC-ZCE7 rev C	D2U64E na	64M x 8	013981	8/9/2007		RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE7 rev C, Device Config: 64M x 8, Bank: 2
512MB	Ventura Technology Group	11	Non-ECC, Unbuffered, 800MHz, Synch 2.5ns, DDR2 DIMM More Info<<<	5	D2-51DD93SV-555	Samsung	K4T51083QC-ZCE7 rev C	D2U64D na	64M x 8	013970	8/8/2007		RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE7 rev C, Device Config: 64M x 8, Bank: 1
512MB	Smart Modular Technologies	10	Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM More Info<<<	5	SG646UDR264851NB	Nanya	NT5TU64M8BE-25C rev B	PG54G240LUBUB1RD rev A	64M x 8	012490	10/25/2006	Yes 7/21/2009 Replacement	RoHS
			DRAM Manuf: Nanya, Dram Part#: NT5TU64M8BE-25C rev B, Device Config: 64M x 8, Bank: 1
2GB	ATP Electronics	9	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	AJ56K64E8BJE6S	Samsung	K4T1G084QA-ZCE6 rev A	SJ240E08K1 na	128M x 8	013381	3/2/2007	Yes 10/30/2007 Replacement	RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T1G084QA-ZCE6 rev A, Device Config: 128M x 8, Bank: 2
1GB	ATP Electronics	9	Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM More Info<<<	5	AJ28K64E8BHE7S	Samsung	K4T51083QC-ZCE7 rev C	SJ240E08K1 na	64M x 8	012231	9/28/2006	Yes 10/23/2007 Replacement	RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE7 rev C, Device Config: 64M x 8, Bank: 2

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