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Motherboard Manufacturer:	Intel	Code name:
Model:	DG965OT	Revision:

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Found: 18

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Size	Module Manufacturer	CRL	Module Info	CL	Part #	DRAM Manufacturer	DRAM Part #	PCB Part #	Device Config	Test #	Test Date	EOL	Env. Code
2GB	Ventura Technology Group	23	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2-55CG64EV-555	Qimonda	HYB18T1G800BF-3S rev B	D2U72G na	128M x 8	013435	7/5/2007		RoHS
			DRAM Manuf: Qimonda, Dram Part#: HYB18T1G800BF-3S rev B, Device Config: 128M x 8, Bank: 2
1GB	Ventura Technology Group	21	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2-53CD64SV-555	Samsung	K4T51083QC-ZCE6 rev C	D2U72G rev 1.0	64M x 8	012688	1/4/2007		Lead-Free
			DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE6 rev C, Device Config: 64M x 8, Bank: 2
512MB	Ventura Technology Group	21	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2-51CD63SV-555	Samsung	K4T51083QC-ZCE6 rev C	D2U72F na	64M x 8	012704	12/18/2006		Lead-Free
			DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE6 rev C, Device Config: 64M x 8, Bank: 1
1GB	ATP Electronics	18	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	AJ28K64E8BHE6S	Samsung	K4T51083QE-ZCE6 rev E	SJ240E08K1 na	64M x 8	013187	2/6/2007		RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T51083QE-ZCE6 rev E, Device Config: 64M x 8, Bank: 2
512MB	ATP Electronics	18	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	AJ64K64D8BHE6S	Samsung	K4T51083QE-ZCE6 rev E	D2U64D na	64M x 8	013164	2/1/2007		RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T51083QE-ZCE6 rev E, Device Config: 64M x 8, Bank: 1
2GB	Smart Modular Technologies	15	Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM More Info<<<	5	SG2566UDR212851ME	Micron	MT47H128M8HQ-25E rev E	PG58G240LUBUB1RE rev B	128M x 8	014424	10/15/2007		RoHS
			DRAM Manuf: Micron, Dram Part#: MT47H128M8HQ-25E rev E, Device Config: 128M x 8, Bank: 2
1GB	Smart Modular Technologies	15	Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM More Info<<<	5	SG1286UDR264851IB	Qimonda (Infineon)	HYB18T512800BF25F rev B	PG58G240LUBUB1RE rev B	64M x 8	014159	7/30/2007	Yes 7/20/2009 Replacement	RoHS
			DRAM Manuf: Qimonda (Infineon), Dram Part#: HYB18T512800BF25F rev B, Device Config: 64M x 8, Bank: 2
2GB	Smart Modular Technologies	14	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	SG2566UDR212852IB	Qimonda	HYB18T1G800BF-3S rev B	PG58G240LUBUB1RE rev B	128M x 8	013902	5/22/2007	Yes 7/21/2009 Replacement	RoHS
			DRAM Manuf: Qimonda, Dram Part#: HYB18T1G800BF-3S rev B, Device Config: 128M x 8, Bank: 2
1GB	Smart Modular Technologies	14	Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM More Info<<<	5	SG1286UDR264851NB	Nanya	NT5TU64M8BE-25C rev B	PG58G240LUBUB1RE rev B	64M x 8	014050	7/26/2007		RoHS
			DRAM Manuf: Nanya, Dram Part#: NT5TU64M8BE-25C rev B, Device Config: 64M x 8, Bank: 2
2GB	Legacy Electronics Inc.	12	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	M526NAE20EC-30R	Micron	MT47H128M8HQ-3 rev E	D2U64E rev E	128M x 8	014245	8/16/2007		RoHS
			DRAM Manuf: Micron, Dram Part#: MT47H128M8HQ-3 rev E, Device Config: 128M x 8, Bank: 2
1GB	Smart Modular Technologies	11	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	SG1286UDR264852-IC	Qimonda	HYB18T512800CF3S rev C	K0705	64M x 8	014218	8/21/2007	Yes 7/21/2009 Replacement	RoHS
			DRAM Manuf: Qimonda, Dram Part#: HYB18T512800CF3S rev C, Device Config: 64M x 8, Bank: 2
1GB	Ventura Technology Group	11	Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM More Info<<<	5	D2-53DD95SV-555	Samsung	K4T51083QC-ZCE7 rev C	D2U64E na	64M x 8	013980	8/3/2007		RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE7 rev C, Device Config: 64M x 8, Bank: 2
512MB	Smart Modular Technologies	11	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	SG646UDR264852-SE	Samsung	K4T51083QE-ZCE6 rev E	M378T6553CZS na	64M x 8	014201	8/14/2007	Yes 7/21/2009 Replacement	RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T51083QE-ZCE6 rev E, Device Config: 64M x 8, Bank: 1
512MB	Ventura Technology Group	11	Non-ECC, Unbuffered, 800MHz, Synch 2.5ns, DDR2 DIMM More Info<<<	5	D2-51DD93SV-555	Samsung	K4T51083QC-ZCE7 rev C	D2U64D na	64M x 8	013969	8/7/2007		RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE7 rev C, Device Config: 64M x 8, Bank: 1
1GB	Legacy Electronics Inc.	8	Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM More Info<<<	5	B516K4C2AEC-25R	Samsung	K4T51083QC-ZCE7 rev C	LE16D2FG38URE rev A	64M x 8	013948	6/6/2007		RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE7 rev C, Device Config: 64M x 8, Bank: 2
1GB	Legacy Electronics Inc.	6	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	B516KCE2AEC-30R	Samsung	K4T51083QE-ZCE6 rev E	LE16D2FG38URE rev A	64M x 8	014314	10/19/2007		RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T51083QE-ZCE6 rev E, Device Config: 64M x 8, Bank: 2
1GB	Ventura Technology Group	6	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2-53CD64LV-555	Elpida	EDE5108AGBG-6E-E rev G	D2U72G na	64M x 8	012906	12/14/2006		RoHS
			DRAM Manuf: Elpida, Dram Part#: EDE5108AGBG-6E-E rev G, Device Config: 64M x 8, Bank: 2
512MB	Ventura Technology Group	5	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2-51CD63LV-555	Elpida	EDE5108AGBG-6E-E rev G	D2U72F na	64M x 8	012903	12/15/2006		RoHS
			DRAM Manuf: Elpida, Dram Part#: EDE5108AGBG-6E-E rev G, Device Config: 64M x 8, Bank: 1

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