The Memory Compatibility Experts

Search > Tested Motherboard > Results >>   Motherboard Manufacturer: Intel Code name: Model: D975XBX2/S975XBX2 Revision: 400 Motherboard Alerts: Page >  Previuos   1   2    3    Next      Found: 51 Click here to view detailed module info >> Size Module Manufacturer Certified CRL Module Info CL Low Profile Part # DRAM Manufacturer DRAM Part # PCB Part # Device Config Test # Test Date Report EOL Env. Code   2GB Ventura Technology Group 23 Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM  More Info<<< 5 D2-55CG64EV-555 Qimonda HYB18T1G800BF-3S rev B D2U72G na 128M x 8 013432 6/29/2007   RoHS DRAM Manuf: Qimonda, Dram Part#: HYB18T1G800BF-3S rev B, Device Config: 128M x 8, Bank: 2 1GB Buffalo 22 Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM  More Info<<< 5 D2U800C-S1GECJ Elpida E1108ACBG-8E-E rev C 2DUD18F-AA rev A 128M x 8 016292 1/28/2009   RoHS DRAM Manuf: Elpida, Dram Part#: E1108ACBG-8E-E rev C, Device Config: 128M x 8, Bank: 1 1GB Ventura Technology Group 21 Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM  More Info<<< 5 D2-53CD64SV-555 Samsung K4T51083QC-ZCE6 rev C D2U72G rev 1.0 64M x 8 012975 1/5/2007   Lead-Free DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE6 rev C, Device Config: 64M x 8, Bank: 2 512MB Ventura Technology Group 21 Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM  More Info<<< 5 D2-51CD63SV-555 Samsung K4T51083QC-ZCE6 rev C D2U72F na 64M x 8 013108 1/16/2007   Lead-Free DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE6 rev C, Device Config: 64M x 8, Bank: 1 2GB Buffalo 18 Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM  More Info<<< 5 D2U800CX-2GHCJ Hynix HY5PS1G831CFP-S5 rev C 2D286NF3-AB 128M x 8 016287 1/26/2009   RoHS DRAM Manuf: Hynix, Dram Part#: HY5PS1G831CFP-S5 rev C, Device Config: 128M x 8, Bank: 2 2GB Buffalo 18 Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM  More Info<<< 5 D2U800CX-2GECJ Elpida E1108ACBG-8E-E rev C 2D286NF3-AB 128M x 8 016108 12/14/2008   RoHS DRAM Manuf: Elpida, Dram Part#: E1108ACBG-8E-E rev C, Device Config: 128M x 8, Bank: 2 1GB ATP Electronics 18 Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM  More Info<<< 5 AJ28K64E8BHE6S Samsung K4T51083QE-ZCE6 rev E SJ240E08K1 na 64M x 8 013175 1/25/2007   RoHS DRAM Manuf: Samsung, Dram Part#: K4T51083QE-ZCE6 rev E, Device Config: 64M x 8, Bank: 2 512MB ATP Electronics 18 Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM  More Info<<< 5 AJ64K64D8BHE6S Samsung K4T51083QE-ZCE6 rev E D2U64D na 64M x 8 013151 2/6/2007   RoHS DRAM Manuf: Samsung, Dram Part#: K4T51083QE-ZCE6 rev E, Device Config: 64M x 8, Bank: 1 1GB Buffalo 17 Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM  More Info<<< 5 D2U800CX-S1GECJ Elpida E1108ACBG-8E-E rev C 2D286NF3-AB 128M x 8 016266 1/27/2009   RoHS DRAM Manuf: Elpida, Dram Part#: E1108ACBG-8E-E rev C, Device Config: 128M x 8, Bank: 1 2GB Smart Modular Technologies 15 Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM  More Info<<< 5 SG2566UDR212851ME Micron MT47H128M8HQ-25E rev E PG58G240LUBUB1RE rev B 128M x 8 014460 10/22/2007   RoHS DRAM Manuf: Micron, Dram Part#: MT47H128M8HQ-25E rev E, Device Config: 128M x 8, Bank: 2 1GB Smart Modular Technologies 15 Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM  More Info<<< 5 SG1286UDR264851IB Qimonda (Infineon) HYB18T512800BF25F rev B PG58G240LUBUB1RE rev B 64M x 8 012888 12/7/2006 Yes 7/20/2009 Replacement RoHS DRAM Manuf: Qimonda (Infineon), Dram Part#: HYB18T512800BF25F rev B, Device Config: 64M x 8, Bank: 2 2GB Smart Modular Technologies 14 Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM  More Info<<< 5 SG2566UDR212852IB Qimonda HYB18T1G800BF-3S rev B PG58G240LUBUB1RE rev B 128M x 8 013906 5/17/2007 Yes 7/21/2009 Replacement RoHS DRAM Manuf: Qimonda, Dram Part#: HYB18T1G800BF-3S rev B, Device Config: 128M x 8, Bank: 2 1GB Smart Modular Technologies 14 Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM  More Info<<< 5 SG1286UDR264851NB Nanya NT5TU64M8BE-25C rev B PG58G240LUBUB1RE rev B 64M x 8 012887 12/6/2006   RoHS DRAM Manuf: Nanya, Dram Part#: NT5TU64M8BE-25C rev B, Device Config: 64M x 8, Bank: 2 2GB Legacy Electronics Inc. 12 Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM  More Info<<< 5 M526NAE20EC-30R Micron MT47H128M8HQ-3 rev E D2U64E rev E 128M x 8 014242 8/10/2007   RoHS DRAM Manuf: Micron, Dram Part#: MT47H128M8HQ-3 rev E, Device Config: 128M x 8, Bank: 2 1GB ATP Electronics 11 Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM  More Info<<< 5 AJ28K64E8BHE7S Samsung K4T51083QE-ZCE7 rev E SJ240E08K1 na 64M x 8 014539 10/29/2007   RoHS DRAM Manuf: Samsung, Dram Part#: K4T51083QE-ZCE7 rev E, Device Config: 64M x 8, Bank: 2 1GB Ventura Technology Group 11 Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM  More Info<<< 5 D2-53DD95SV-555 Samsung K4T51083QC-ZCE7 rev C D2U64E na 64M x 8 013977 7/31/2007   RoHS DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE7 rev C, Device Config: 64M x 8, Bank: 2 512MB Ventura Technology Group 11 Non-ECC, Unbuffered, 800MHz, Synch 2.5ns, DDR2 DIMM  More Info<<< 5 D2-51DD93SV-555 Samsung K4T51083QC-ZCE7 rev C D2U64D na 64M x 8 013966 7/23/2007   RoHS DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE7 rev C, Device Config: 64M x 8, Bank: 1 512MB Smart Modular Technologies 10 Non-ECC, Unbuffered, 800Mhz, Synch 2.5ns, DDR2 DIMM  More Info<<< 5 SG646UDR264851NB Nanya NT5TU64M8BE-25C rev B PG54G240LUBUB1RD rev A 64M x 8 012889 12/12/2006 Yes 7/21/2009 Replacement RoHS DRAM Manuf: Nanya, Dram Part#: NT5TU64M8BE-25C rev B, Device Config: 64M x 8, Bank: 1 2GB ATP Electronics 9 Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM  More Info<<< 5 AJ56K64E8BJE6S Samsung K4T1G084QA-ZCE6 rev A SJ240E08K1 na 128M x 8 013379 2/28/2007 Yes 10/30/2007 Replacement RoHS DRAM Manuf: Samsung, Dram Part#: K4T1G084QA-ZCE6 rev A, Device Config: 128M x 8, Bank: 2 2GB Buffalo 9 Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM  More Info<<< 5 D2U667C-2GMEJ Micron MT47H128M8HQ-3 rev E 2DUE28F-AA na 128M x 8 013926 6/5/2007   RoHS DRAM Manuf: Micron, Dram Part#: MT47H128M8HQ-3 rev E, Device Config: 128M x 8, Bank: 2 Page >  Previuos   1   2    3    Next

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