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Motherboard Manufacturer:	Intel	Code name:
Model:	D975XBX	Revision:	D27094-203

Motherboard Alerts:	Double-sided DIMMs with x16 organization are not supported.

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Found: 54

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Size	Module Manufacturer	CRL	Module Info	CL	Part #	DRAM Manufacturer	DRAM Part #	PCB Part #	Device Config	Test #	Test Date	EOL	Env. Code
2GB	Ventura Technology Group	23	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2-55CG64EV-555	Qimonda	HYB18T1G800BF-3S rev B	D2U72G na	128M x 8	013431	6/28/2007		RoHS
			DRAM Manuf: Qimonda, Dram Part#: HYB18T1G800BF-3S rev B, Device Config: 128M x 8, Bank: 2
1GB	Ventura Technology Group	21	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2-53CD64SV-555	Samsung	K4T51083QC-ZCE6 rev C	D2U72G rev 1.0	64M x 8	012684	1/3/2007		Lead-Free
			DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE6 rev C, Device Config: 64M x 8, Bank: 2
512MB	Ventura Technology Group	21	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2-51CD63SV-555	Samsung	K4T51083QC-ZCE6 rev C	D2U72F na	64M x 8	012707	12/23/2006		Lead-Free
			DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE6 rev C, Device Config: 64M x 8, Bank: 1
2GB	Smart Modular Technologies	14	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	SG2566UDR212852IB	Qimonda	HYB18T1G800BF-3S rev B	PG58G240LUBUB1RE rev B	128M x 8	013907	5/24/2007	Yes 7/21/2009 Replacement	RoHS
			DRAM Manuf: Qimonda, Dram Part#: HYB18T1G800BF-3S rev B, Device Config: 128M x 8, Bank: 2
512MB	Legend	11	Non-ECC, Unbuffered, 533Mhz, Synch 3.75ns, DDR2 DIMM More Info<<<	4	L64642CE-UR1H2H1F	Hynix	HY5PS12821F-C4 rev F	B62URCD rev 1	64M x 8	010872	3/27/2006		N/A
			DRAM Manuf: Hynix, Dram Part#: HY5PS12821F-C4 rev F, Device Config: 64M x 8, Bank: N/A
256MB	Legend	11	Non-ECC, Unbuffered, 533Mhz, Synch 3.75ns, DDR2 DIMM More Info<<<	4	L32642CE-UR1H2CBF	Hyundai	HY5PS56821F-C4 rev A	B62URCA rev 1	32M x 8	010877	2/14/2006		N/A
			DRAM Manuf: Hyundai, Dram Part#: HY5PS56821F-C4 rev A, Device Config: 32M x 8, Bank: N/A
1GB	Buffalo	10	Non-ECC, Unbuffered, 533Mhz, Synch 3.75ns, DDR2 DIMM More Info<<<	4	D2U533B-1GMBJ	Micron	MT47H64M8CB-37E rev B	2DUZ28F-AA	64M x 8	010867	3/16/2006		Lead-Free
			DRAM Manuf: Micron, Dram Part#: MT47H64M8CB-37E rev B, Device Config: 64M x 8, Bank: 2
512MB	Legend	10	Non-ECC, Unbuffered, 533Mhz, Synch 3.75ns, DDR2 DIMM More Info<<<	4	L64642CE-UR1H2CBF	Hyundai	HY5PS56821F-C4 rev A	B62URCA rev 1	32M x 8	010875	4/6/2006		N/A
			DRAM Manuf: Hyundai, Dram Part#: HY5PS56821F-C4 rev A, Device Config: 32M x 8, Bank: N/A
2GB	Buffalo	9	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2U667C-2GMEJ	Micron	MT47H128M8HQ-3 rev E	2DUE28F-AA na	128M x 8	013927	6/6/2007		RoHS
			DRAM Manuf: Micron, Dram Part#: MT47H128M8HQ-3 rev E, Device Config: 128M x 8, Bank: 2
2GB	TRS	9	ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	TRS30321X	Elpida	E1108AB-6E-E rev B	M0540LA1 rev 1	128M x 8	015031	3/19/2008		RoHS
			DRAM Manuf: Elpida, Dram Part#: E1108AB-6E-E rev B, Device Config: 128M x 8, Bank: 2
512MB	Smart Modular Technologies	9	Non-ECC, Unbuffered, 533Mhz, Synch 3.75ns, DDR2 DIMM More Info<<<	4	SG646UDR264843-SC	Samsung	K4T51083QC-ZCD5 rev C	M378T6553BG1 rev 3	64M x 8	011303	3/31/2006	Yes 7/21/2009 Replacement	Lead-Free
			DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCD5 rev C, Device Config: 64M x 8, Bank: 1
2GB	TRS	8	ECC, Unbuffered, 533Mhz, Synch 3.75ns, DDR2 DIMM More Info<<<	4	TRS30320X	Elpida	E1108AB-5C-E rev B	M0540LA1 rev 1	128M x 8	015023	3/17/2008		RoHS
			DRAM Manuf: Elpida, Dram Part#: E1108AB-5C-E rev B, Device Config: 128M x 8, Bank: 2
1GB	ATP Electronics	8	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	AJ28K64E8BHE6S	Samsung	K4T51083QC-ZCE6 rev C	SJ240E08K1	64M x 8	010859	1/19/2006	Yes 1/19/2007 Replacement	RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE6 rev C, Device Config: 64M x 8, Bank: 2
1GB	Buffalo	8	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2U667C-1G/EGJ	Elpida	E5108AG(BG)-6E-E rev G	2DUE28F-AA na	64M x 8	011369	4/24/2006		Lead-Free
			DRAM Manuf: Elpida, Dram Part#: E5108AG(BG)-6E-E rev G, Device Config: 64M x 8, Bank: 2
1GB	Avant Technology	7	Non-ECC, Unbuffered, 533Mhz, Synch 3.75ns, DDR2 DIMM More Info<<<	4	AVF6428U52E4533F4-NYAP	Nanya	NT5TU64M8AE-37B rev A	B62URCE 1.00 rev 1	64M x 8	011511	5/12/2006		Lead-Free
			DRAM Manuf: Nanya, Dram Part#: NT5TU64M8AE-37B rev A, Device Config: 64M x 8, Bank: 2
512MB	Buffalo	7	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2U667C-S512EGJ	Elpida	E5108AG(BG)-6E-E rev G	2DUD18F-AA na	64M x 8	011373	4/25/2006		RoHS
			DRAM Manuf: Elpida, Dram Part#: E5108AG(BG)-6E-E rev G, Device Config: 64M x 8, Bank: 1
512MB	Buffalo	7	Non-ECC, Unbuffered, 533Mhz, Synch 3.75ns, DDR2 DIMM More Info<<<	4	D2U533B-S512MBJ	Micron	MT47H64M8CB-37E rev B	2DUA18F-BA rev B	64M x 8	010868	1/17/2006		Lead-Free
			DRAM Manuf: Micron, Dram Part#: MT47H64M8CB-37E rev B, Device Config: 64M x 8, Bank: 1
1GB	ATP Electronics	6	Non-ECC, Unbuffered, 533Mhz, Synch 3.75ns, DDR2 DIMM More Info<<<	4	AJ28K64E8BHD5S	Samsung	K4T51083QC-ZCD5 rev C	SJ240E08K1 na	64M x 8	010860	1/18/2006		Lead-Free
			DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCD5 rev C, Device Config: 64M x 8, Bank: 2
1GB	Legacy Electronics Inc.	6	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	B516K4C2AEC-30R	Samsung	K4T51083QC-ZCE6 rev C	LE16D2FG38URE rev A	64M x 8	011532	5/24/2006		Lead-Free
			DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE6 rev C, Device Config: 64M x 8, Bank: 2
1GB	Ventura Technology Group	6	ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2-54CD64SV-555	Samsung	K4T51083QC-ZCE6 rev C	D2U72G rev 1.0	64M x 8	012689	12/18/2006		Lead-Free
			DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE6 rev C, Device Config: 64M x 8, Bank: 2

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