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Motherboard Manufacturer:	Intel	Code name:
Model:	D945GCZ/D945PAW	Revision:

Motherboard Alerts:	1. These DIMMs have passed compatibility testing on Intel Desktop D945GCZ. Intel has approved the use of these test results to also certify compatibility for the following Intel Desktop Boards: D945PAW "Atwood". 2. Double-sided DIMMs with x16 organization are not supported.

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Found: 48

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Size	Module Manufacturer	CRL	Module Info	CL	Part #	DRAM Manufacturer	DRAM Part #	PCB Part #	Device Config	Test #	Test Date	EOL	Env. Code
2GB	Ventura Technology Group	23	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2-55CG64EV-555	Qimonda	HYB18T1G800BF-3S rev B	D2U72G na	128M x 8	014078	7/27/2007		RoHS
			DRAM Manuf: Qimonda, Dram Part#: HYB18T1G800BF-3S rev B, Device Config: 128M x 8, Bank: 2
1GB	Ventura Technology Group	21	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2-53CD64SV-555	Samsung	K4T51083QC-ZCE6 rev C	D2U72G rev 1.0	64M x 8	010845	2/2/2006		Lead-Free
			DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE6 rev C, Device Config: 64M x 8, Bank: 2
512MB	Ventura Technology Group	21	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2-51CD63SV-555	Samsung	K4T51083QC-ZCE6 rev C	D2U72F na	64M x 8	010839	2/14/2006		Lead-Free
			DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE6 rev C, Device Config: 64M x 8, Bank: 1
1GB	ATP Electronics	18	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	AJ28K64E8BHE6S	Samsung	K4T51083QE-ZCE6 rev E	SJ240E08K1 na	64M x 8	013167	2/7/2007		RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T51083QE-ZCE6 rev E, Device Config: 64M x 8, Bank: 2
512MB	ATP Electronics	18	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	AJ64K64D8BHE6S	Samsung	K4T51083QE-ZCE6 rev E	D2U64D na	64M x 8	013149	1/31/2007		RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T51083QE-ZCE6 rev E, Device Config: 64M x 8, Bank: 1
2GB	Legacy Electronics Inc.	12	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	M526NAE20EC-30R	Micron	MT47H128M8HQ-3 rev E	D2U64E rev E	128M x 8	014241	8/14/2007		RoHS
			DRAM Manuf: Micron, Dram Part#: MT47H128M8HQ-3 rev E, Device Config: 128M x 8, Bank: 2
1GB	Buffalo	12	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2U667C-1GEJJ	Elpida	E5108AJBG-6E-E rev J	2DUE28F-AA na	64M x 8	014864	2/5/2008		RoHS
			DRAM Manuf: Elpida, Dram Part#: E5108AJBG-6E-E rev J, Device Config: 64M x 8, Bank: 2
512MB	Legend	11	Non-ECC, Unbuffered, 533Mhz, Synch 3.75ns, DDR2 DIMM More Info<<<	4	L64642CE-UR1H2H1F	Hynix	HY5PS12821F-C4 rev F	B62URCD rev 1	64M x 8	010355	11/23/2005		N/A
			DRAM Manuf: Hynix, Dram Part#: HY5PS12821F-C4 rev F, Device Config: 64M x 8, Bank: N/A
256MB	Legend	11	Non-ECC, Unbuffered, 533Mhz, Synch 3.75ns, DDR2 DIMM More Info<<<	4	L32642CE-UR1H2CBF	Hyundai	HY5PS56821F-C4 rev A	B62URCA rev 1	32M x 8	009884	8/23/2005		N/A
			DRAM Manuf: Hyundai, Dram Part#: HY5PS56821F-C4 rev A, Device Config: 32M x 8, Bank: N/A
512MB	Legend	10	Non-ECC, Unbuffered, 533Mhz, Synch 3.75ns, DDR2 DIMM More Info<<<	4	L64642CE-UR1H2CBF	Hyundai	HY5PS56821F-C4 rev A	B62URCA rev 1	32M x 8	009883	8/15/2005		N/A
			DRAM Manuf: Hyundai, Dram Part#: HY5PS56821F-C4 rev A, Device Config: 32M x 8, Bank: N/A
2GB	Buffalo	9	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2U667C-2GMEJ	Micron	MT47H128M8HQ-3 rev E	2DUE28F-AA na	128M x 8	014589	11/12/2007		RoHS
			DRAM Manuf: Micron, Dram Part#: MT47H128M8HQ-3 rev E, Device Config: 128M x 8, Bank: 2
512MB	Smart Modular Technologies	9	Non-ECC, Unbuffered, 533Mhz, Synch 3.75ns, DDR2 DIMM More Info<<<	4	SG646UDR264843-SC	Samsung	K4T51083QC-ZCD5 rev C	M378T6553BG1 rev 3	64M x 8	011057	3/9/2006	Yes 7/21/2009 Replacement	Lead-Free
			DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCD5 rev C, Device Config: 64M x 8, Bank: 1
1GB	ATP Electronics	8	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	AJ28K64E8BHE6S	Samsung	K4T51083QC-ZCE6 rev C	SJ240E08K1	64M x 8	009633	9/1/2005	Yes 1/19/2007 Replacement	RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE6 rev C, Device Config: 64M x 8, Bank: 2
1GB	Buffalo	8	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2U667C-1G/EGJ	Elpida	E5108AG(BG)-6E-E rev G	2DUE28F-AA na	64M x 8	011371	11/6/2007		Lead-Free
			DRAM Manuf: Elpida, Dram Part#: E5108AG(BG)-6E-E rev G, Device Config: 64M x 8, Bank: 2
1GB	Smart Modular Technologies	8	Non-ECC, Unbuffered, 533Mhz, Synch 3.75ns, DDR2 DIMM More Info<<<	4	SG1286UDR264843IAP	Qimonda (Infineon)	HYB18T512800AF37 rev A	PG58G240NUBUB2RB rev A	64M x 8	009907	9/15/2005	Yes 7/20/2009 Replacement	Lead-Free
			DRAM Manuf: Qimonda (Infineon), Dram Part#: HYB18T512800AF37 rev A, Device Config: 64M x 8, Bank: 2
1GB	Smart Modular Technologies	7	Non-ECC, Unbuffered, 533Mhz, Synch 3.75ns, DDR2 DIMM More Info<<<	4	SM1286UDR26484-3-I	Qimonda (Infineon)	HYB18T512800AF37 rev A	240-2-3	64M x 8	009635	7/22/2005	Yes 7/21/2009 Replacement	N/A
			DRAM Manuf: Qimonda (Infineon), Dram Part#: HYB18T512800AF37 rev A, Device Config: 64M x 8, Bank: N/A
512MB	ATP Electronics	7	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	AJ64K64D8BHE6S	Samsung	K4T51083QC-ZCE6 rev C	SJ240D08K1	64M x 8	009634	7/28/2005	Yes 1/19/2007 Replacement	RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE6 rev C, Device Config: 64M x 8, Bank: 1
512MB	Buffalo	7	Non-ECC, Unbuffered, 533Mhz, Synch 3.75ns, DDR2 DIMM More Info<<<	4	D2U533B-S512MBJ	Micron	MT47H64M8CB-37E rev B	2DUA18F-BA rev B	64M x 8	009644	7/12/2005		Lead-Free
			DRAM Manuf: Micron, Dram Part#: MT47H64M8CB-37E rev B, Device Config: 64M x 8, Bank: 1
1GB	Legacy Electronics Inc.	6	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	B516K4C2AEC-30R	Samsung	K4T51083QC-ZCE6 rev C	LE16D2FG38URE rev A	64M x 8	011531	7/17/2006		Lead-Free
			DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE6 rev C, Device Config: 64M x 8, Bank: 2
1GB	Swissbit	6	Non-ECC, Unbuffered, 533Mhz, Synch 3.75ns, DDR2 DIMM More Info<<<	4	SEU12864D3B52EP-37R	Elpida	EDE5108AESK-5C-E rev E	8132c rev C	64M x 8	010557	12/23/2005		RoHS
			DRAM Manuf: Elpida, Dram Part#: EDE5108AESK-5C-E rev E, Device Config: 64M x 8, Bank: 2

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