CMTL > Search > Tested Motherboard

The Memory Compatibility Experts

Search > Tested Motherboard > Results >>

Motherboard Manufacturer:	Intel	Code name:
Model:	D945GCL	Revision:

Motherboard Alerts:

Page > Previuos 1 Next

Found: 11

Click here to view detailed module info >>

Size	Module Manufacturer	CRL	Module Info	CL	Part #	DRAM Manufacturer	DRAM Part #	PCB Part #	Device Config	Test #	Test Date	EOL	Env. Code
2GB	Ventura Technology Group	23	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2-55CG64EV-555	Qimonda	HYB18T1G800BF-3S rev B	D2U72G na	128M x 8	014075	7/12/2007		RoHS
			DRAM Manuf: Qimonda, Dram Part#: HYB18T1G800BF-3S rev B, Device Config: 128M x 8, Bank: 2
1GB	Ventura Technology Group	21	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2-53CD64SV-555	Samsung	K4T51083QC-ZCE6 rev C	D2U72G rev 1.0	64M x 8	013403	3/2/2007		Lead-Free
			DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE6 rev C, Device Config: 64M x 8, Bank: 2
512MB	Ventura Technology Group	21	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2-51CD63SV-555	Samsung	K4T51083QC-ZCE6 rev C	D2U72F na	64M x 8	013401	3/6/2007		Lead-Free
			DRAM Manuf: Samsung, Dram Part#: K4T51083QC-ZCE6 rev C, Device Config: 64M x 8, Bank: 1
1GB	ATP Electronics	18	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	AJ28K64E8BHE6S	Samsung	K4T51083QE-ZCE6 rev E	SJ240E08K1 na	64M x 8	013166	2/2/2007		RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T51083QE-ZCE6 rev E, Device Config: 64M x 8, Bank: 2
512MB	ATP Electronics	18	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	AJ64K64D8BHE6S	Samsung	K4T51083QE-ZCE6 rev E	D2U64D na	64M x 8	013148	1/23/2007		RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T51083QE-ZCE6 rev E, Device Config: 64M x 8, Bank: 1
2GB	Smart Modular Technologies	14	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	SG2566UDR212852IB	Qimonda	HYB18T1G800BF-3S rev B	PG58G240LUBUB1RE rev B	128M x 8	013903	5/22/2007	Yes 7/21/2009 Replacement	RoHS
			DRAM Manuf: Qimonda, Dram Part#: HYB18T1G800BF-3S rev B, Device Config: 128M x 8, Bank: 2
2GB	Legacy Electronics Inc.	12	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	M526NAE20EC-30R	Micron	MT47H128M8HQ-3 rev E	D2U64E rev E	128M x 8	014238	8/13/2007		RoHS
			DRAM Manuf: Micron, Dram Part#: MT47H128M8HQ-3 rev E, Device Config: 128M x 8, Bank: 2
1GB	Buffalo	12	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2U667C-1GEJJ	Elpida	E5108AJBG-6E-E rev J	2DUE28F-AA na	64M x 8	014862	2/1/2008		RoHS
			DRAM Manuf: Elpida, Dram Part#: E5108AJBG-6E-E rev J, Device Config: 64M x 8, Bank: 2
2GB	ATP Electronics	9	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	AJ56K64E8BJE6S	Samsung	K4T1G084QA-ZCE6 rev A	SJ240E08K1 na	128M x 8	013378	2/28/2007	Yes 10/30/2007 Replacement	RoHS
			DRAM Manuf: Samsung, Dram Part#: K4T1G084QA-ZCE6 rev A, Device Config: 128M x 8, Bank: 2
1GB	Ventura Technology Group	6	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2-53CD64LV-555	Elpida	EDE5108AGBG-6E-E rev G	D2U72G na	64M x 8	012908	12/15/2006		RoHS
			DRAM Manuf: Elpida, Dram Part#: EDE5108AGBG-6E-E rev G, Device Config: 64M x 8, Bank: 2
512MB	Ventura Technology Group	5	Non-ECC, Unbuffered, 667Mhz, Synch 3ns, DDR2 DIMM More Info<<<	5	D2-51CD63LV-555	Elpida	EDE5108AGBG-6E-E rev G	D2U72F na	64M x 8	012904	12/14/2006		RoHS
			DRAM Manuf: Elpida, Dram Part#: EDE5108AGBG-6E-E rev G, Device Config: 64M x 8, Bank: 1

Page > Previuos 1 Next